Cost Effective Ceramic Microstrip Package

Description The MSA-0636 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifier

Cascadable Silicon Bipolar MMIC Amplifiers

[HP] Description The MSA-0635 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF ampl

Cascadable Silicon Bipolar MMIC Amplifiers

Description The MSA-0635 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers

Cost Effective Ceramic Microstrip Package

Description The MSA-0636 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifier

Cost Effective Ceramic Microstrip Package

Description The MSA-0636 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifier

Cascadable Silicon Bipolar MMIC Amplifiers

封装/外壳：4-SMD（36 micro-X） 包装：散装 描述：IC AMP ISM 0HZ-900MHZ 36 MICRO-X RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：4-SMD（36 micro-X） 包装：卷带（TR） 描述：IC AMP ISM 0HZ-900MHZ 36 MICRO-X RF/IF，射频/中频和 RFID 射频放大器

Double-Ended Cordsets

BCC M425-M423-3A-302-EX43T2-050 Basic features Approval/Conformity CE cULus WEEE

3-PHASE HALF-BRIDGE GATE DRIVER IN SO28

Features • Three Floating High-Side Drivers in Bootstrap Operation to 100V • 200mA Source / 350mA Sink Output Current Capability • Outputs Tolerant to Negative Transients, dV/dt Immune • Logic Input 3.3V Capability • Internal Deadtime of 290ns to Protect MOSFETs and IGBTs • Matched Prop Dela

Schottky Barrier Diode (Twin Type 쨌 Cathode Common) 160V, 5A Rectifier

160V, 5A Rectifier Features • Tj=150°C. • Low forward voltage (VF max=0.80V). • Short reverse recovery time. • Low switching noise. • High reliability due to planar structure. • Attachment workability is good by Mica-less package. Applications • High frequency rectification (switching reg

For LEAD TYPE

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Sensor

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