RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION: The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0 – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions. Features · 3.0 GHz

Trans GP BJT NPN 45V 0.5A

Quad voltage comparator

The LM139 series consists of four independent precision voltage comparators, with an offset voltage specification as low as 2.0mV max for each comparator, which were designed specifically to operate from a single power supply over a wide range of voltages.

Quad Single Supply Comparators

These comparators are designed for use in level detection, low–level sensing and memory applications in consumer automotive and industrial electronic applications. 1. Single or Split Supply Operation 2. Low Input Bias Current: 25 nA (Typ) 3. Low Input Offset Current: ±5.0 nA (Typ) 4. Low Inp

SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm

WaveFET™ Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withst

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ● High Input Impedance ● High Speed ● Low Saturation Voltage ● Enhancement Mode Applications: ● High Power Switching ● Motor Control

Low Power Low Offset Voltage Quad Comparators

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