RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. • Features • 175 MHz • 12.5 VOLTS • POUT

RF & MICROWAVE TRANSISTORS VHP MOBILE APPLICATIONS

DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. • Features • 175 MHz • 12.5 VOLTS • POUT

封装/外壳：M122 包装：散装 描述：RF TRANS NPN 18V 175MHZ M122 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

GaAlAs Infrared Emitting Diodes

DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

Surface Mounting Chip LED

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Ultra Hight Bright Surface Mounting Chip

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Ultra Hight Bright Surface Mounting Chip

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Surface Mounting Chip LED

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