丝印代码：MS125；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

丝印代码：MS125；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

丝印代码：MS125；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

Surface Mount Si-Bridge-Rectifiers Si-Br짰kengleichrichter f짰 die Oberfl짰henmontage

Nominal current 0.5 A Alternating input voltage 40 500 V Plastic case 3 x 3 x 1.5mm Weight approx. 0.04 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

Surface Mount Si-Bridge-Rectifiers

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Surface Mount Si-Bridge-Rectifiers Si-Br®kengleichrichter f® die Oberfl®henmontage

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions. Features • 175 MHz • 12.5 VOLTS • POUT = 45 WATTS •

RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS

DESCRIPTION: The MS1252 is especially designed for VHF large signal amplifier applications in industrial and commercial FM equipment operating up to 175 MHz. Ideally suited for marine radio applications. Features • FREQUENCY 160MHz • VOLTAGE 13.6V • COMMON EMITTER • POWER OUT 40W • POWER GA

RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

DESCRIPTION: The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. Features • 50 MHz • 12.5 VOLT

CIT SWITCH

CIT RELAY & SWITCH

减振器模块

减振器模块

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12