高精度时间测量(TDC)电路

主要特点 \n测量范围 1： \n 双通道，最小分辨率 65ps \n 测量范围 0-1.8us \n 间隔脉冲分辨能力为 15ns，每个通道可进行 4 次采样 \n 可测量 4 次采样中任意 2 个采样之间的时间间隔 \n 输入信号可以选择上升沿/下降沿单独或同时触发 \n测量范围 2： \n 单通道，最小分辨率 65ps \n 测量范围 500ns-4ms@4MHZ \n 间隔脉冲对分辨能力为两个校准时钟周期，可进行 3 次采样 \n 输入信号可以选择上升沿/下降沿单独或同时触发 \n 3 次采样中分别由三个去噪声窗口过滤;

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp