位置：首页 > IC中文资料第984页 > MRFE6S9135H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applica | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applica | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 66V 940MHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 66V 940MHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRFE6S9135H产品属性
- 类型
描述
- 型号
MRFE6S9135H
- 功能描述
射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSL |
24+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
FREESCAL |
22+ |
NI-880S |
5000 |
原装现货库存.价格优势 |
|||
FREESCALE |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
FREESCAL |
08+ |
SMD |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FREESCALE |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
FREESCA |
2020+ |
NI-880S |
5 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
飞思卡尔 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FREESCALE |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
恩XP |
22+ |
NI880 |
9000 |
原厂渠道,现货配单 |
|||
FRESSCAL |
24+ |
SMD |
166 |
MRFE6S9135H规格书下载地址
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