位置：首页 > IC中文资料第2068页 > MRF8S9170NR3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF8S9170NR3 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 920--960 MHz, 50 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF8S9170NR3 | RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 文件：463.89 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | |
MRF8S9170NR3 | 封装/外壳：OM-780-2 包装：管件 描述：FET RF 70V 920MHZ OM780-2 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 文件：463.89 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF8S9170NR3产品属性
- 类型
描述
- 型号
MRF8S9170NR3
- 功能描述
射频MOSFET电源晶体管 HV8 900MHz 50W
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA |
5070 |
全新原装,价格优势,原厂原包 |
|||
FREESCALE |
23+ |
SMD |
1200 |
全新原装现货,价格优势 |
|||
FREESCALE/飞思卡尔 |
25+ |
原装 |
32360 |
FREESCALE/飞思卡尔全新特价MRF8S9170NR3即刻询购立享优惠#长期有货 |
|||
FREESCALE |
23+ |
原厂原包封装 |
20000 |
全新原装假一赔十 |
|||
FREESCALE |
24+ |
晶体管 |
100 |
“芯达集团”专营军工、宇航级IC原装进口现货 |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
恩XP |
23+ |
OM7802 |
8000 |
只做原装现货 |
|||
FSL |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FREESCALE |
23+ |
HV8900MHZ50 |
50000 |
全新原装正品现货,支持订货 |
|||
Freescale |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
MRF8S9170NR3芯片相关品牌
MRF8S9170NR3规格书下载地址
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MRF8S9170NR3数据表相关新闻
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