RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON RF LOW POWER TRANSISTOR 750 mW, 870 MHz

RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

41 dB Range, 1 dB Step Size, Programmable Dual VGA

GENERAL DESCRIPTION The AD8372 is a dual, digitally controlled, variable gain amplifier that provides precise gain control, high IP3, and low noise figure. The excellent distortion performance and moderate signal bandwidth make the AD8372 a suitable gain control device for a variety of multicha

ONE WAY SERIES WIRE CONNECTOR

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Wire-Thread-Inserts

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Programmable Dual VGA

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Programmable Dual VGA

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