型号 功能描述 生产厂家 企业 LOGO 操作

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL appl

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL appl

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:442.39 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:443.39 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:802.93 Kbytes Page:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:452.94 Kbytes Page:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:442.39 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:443.39 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:802.93 Kbytes Page:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:452.94 Kbytes Page:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:SOT-957A 包装:卷带(TR) 描述:FET RF 65V 2.17GHZ NI-880 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 50 W Avg., 28 V

ETC

知名厂家

RF Power Field Effect Transistors

文件:452.94 Kbytes Page:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:NI-880S 包装:卷带(TR) 描述:FET RF 65V 2.17GHZ NI-88OS 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:802.93 Kbytes Page:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:443.39 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:442.39 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF7S21170产品属性

  • 类型

    描述

  • 型号

    MRF7S21170

  • 功能描述

    射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI880H

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-12-28 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FREESCALE
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
FREESCALE
2019+
NI-880S
6992
原厂渠道 可含税出货
FRESC
24+
214
FREESCALE
24+
NI-880S
9600
原装现货,优势供应,支持实单!
FREESCA
18+
NI-880
85600
保证进口原装可开17%增值税发票
FREESCALE
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Freescale
24+
SMD
5500
长期供应原装现货实单可谈
FREESCALE
0826+
NI-880S
156
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
原厂封装
9800
原装进口公司现货假一赔百
FREESCALE
2021+
NI-880S
6800
原厂原装,欢迎咨询

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