位置：首页 > IC中文资料第660页 > MRF6S19100HSR3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF6S19100HSR3 | RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |  |   |
MRF6S19100HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：413.11 Kbytes Page：11 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | |
MRF6S19100HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：427.96 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | |
MRF6S19100HSR3 | 封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF6S19100HSR3产品属性
- 类型
描述
- 型号
MRF6S19100HSR3
- 功能描述
射频MOSFET电源晶体管 HV6 WCDMA 22W NI780HS
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale |
24+ |
NI-780S |
750 |
原装现货假一罚十 |
|||
恩XP |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
FRESC |
24+ |
100 |
|||||
xilinx |
22+ |
. |
6800 |
||||
FREESCALE |
24+ |
244 |
现货供应 |
||||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
MOTOROLA/摩托罗拉 |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
FLS |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
MRF6S19100HSR3芯片相关品牌
MRF6S19100HSR3规格书下载地址
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MRF6S19100HSR3数据表相关新闻
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