位置：首页 > IC中文资料第660页 > MRF6S19100HS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：413.11 Kbytes Page：11 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：427.96 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF6S19100HS产品属性
- 类型
描述
- 型号
MRF6S19100HS
- 制造商
Freescale Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FLS |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
xilinx |
22+ |
. |
6800 |
||||
FREESCALE |
22+ |
NA |
18000 |
原装现货原盒原包.假一罚十 |
|||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FREESCALE |
17+ |
SMD |
6200 |
100%原装正品现货 |
|||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
恩XP |
22+ |
NI780S |
9000 |
原厂渠道,现货配单 |
|||
FRESC |
24+ |
100 |
|||||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
恩XP |
23+ |
NI780S |
8000 |
只做原装现货 |
MRF6S19100HS规格书下载地址
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