位置：首页 > IC中文资料第966页 > MRF6S19060NB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL ap | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
RF Power Field Effect Transistors 文件：613.41 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：TO-272BB 包装：卷带（TR） 描述：FET RF 68V 1.93GHZ TO272-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors 文件：613.41 Kbytes Page：16 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF6S19060NB产品属性
- 类型
描述
- 型号
MRF6S19060NB
- 功能描述
射频MOSFET电源晶体管 1990MHZ 12W
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCA |
10+ |
高频管 |
36 |
全新原装进口,拒绝假货,真实库存/特价出货 |
|||
FSE |
22+ |
SMD |
12245 |
现货,原厂原装假一罚十! |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FREESCALE/飞思卡尔 |
24+ |
TO-272 |
60000 |
全新原装现货 |
|||
原装 |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
|||
FREESCALE |
17+ |
TO270-4 |
6200 |
100%原装正品现货 |
|||
FREESCALE |
21+ |
TO-272 |
3540 |
原装现货假一赔十 |
|||
Freescale |
24+ |
TO-272 |
1500 |
原装现货假一罚十 |
|||
FREESCALE |
24+ |
NA/ |
3540 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FREESCALE |
23+ |
原厂原包封装 |
8000 |
全新原装假一赔十 |
MRF6S19060NB规格书下载地址
MRF6S19060NB参数引脚图相关
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