位置：首页 > IC中文资料第581页 > MRF6S18100NB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 28 Volt | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：769.86 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：TO-272BB 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ TO2724 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF6S18100NB产品属性
- 类型
描述
- 型号
MRF6S18100NB
- 功能描述
射频MOSFET电源晶体管 1990MHZ 28V
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
24+ |
NA/ |
487 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Freescale |
24+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
freescal |
12+ |
TO272 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FREESCALE |
2450+ |
TO-272 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
FREESCALE |
23+ |
TO-272 |
4582 |
全新原装现货特价/假一罚十 |
|||
FREESCALE |
22+ |
NA |
18000 |
原装现货原盒原包.假一罚十 |
|||
FREESCALE |
06+12 |
20 |
公司优势库存 热卖中! |
||||
FSL |
19+ |
SMD |
24333 |
||||
FREESCALE/飞思卡尔 |
24+ |
TO-272 |
56200 |
郑重承诺只做原装进口现货 |
|||
恩XP |
22+ |
TO272 WB4 |
9000 |
原厂渠道,现货配单 |
MRF6S18100NB规格书下载地址
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