位置：首页 > IC中文资料第581页 > MRF6S18060NR1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF6S18060NR1 | RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Vdc | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF6S18060NR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：768.61 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | |
MRF6S18060NR1 | 封装/外壳：TO-270AB 包装：托盘 描述：FET RF 68V 1.99GHZ TO270-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：768.61 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF6S18060NR1产品属性
- 类型
描述
- 型号
MRF6S18060NR1
- 功能描述
射频MOSFET电源晶体管 1880MHZ 60W
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSL |
24+ |
NA/ |
34 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FREESCALE |
25+23+ |
TO-270AB |
14253 |
绝对原装正品全新进口深圳现货 |
|||
FREESCALE |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FREESCALE |
17+ |
TO-270AB |
6200 |
100%原装正品现货 |
|||
原厂 |
23+ |
高频管 |
5000 |
原装正品,假一罚十 |
|||
FRESC |
24+ |
38 |
|||||
FREESCA |
18+ |
TO272 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FREESCALE |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MRF6S18060NR1芯片相关品牌
MRF6S18060NR1规格书下载地址
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