位置：首页 > IC中文资料第581页 > MRF6S18060NR1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF6S18060NR1 | RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Vdc | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF6S18060NR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：768.61 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | |
MRF6S18060NR1 | 封装/外壳：TO-270AB 包装：托盘 描述：FET RF 68V 1.99GHZ TO270-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：768.61 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF6S18060NR1产品属性
- 类型
描述
- 型号
MRF6S18060NR1
- 功能描述
射频MOSFET电源晶体管 1880MHZ 60W
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSL |
24+ |
NA/ |
34 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
22+ |
TO270 WB4 |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
MOT |
23+ |
高频管 |
500 |
专营高频管模块,全新原装! |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FREESCALE |
25+23+ |
TO-270AB |
14253 |
绝对原装正品全新进口深圳现货 |
|||
FREESCALE |
25+ |
SMD |
1200 |
全新原装现货,价格优势 |
MRF6S18060NR1芯片相关品牌
MRF6S18060NR1规格书下载地址
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