RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two–Tone Performance @ 860

RF Power Field Effect Transistors

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封装/外壳：NI-650 包装：散装 描述：FET RF 70V 863MHZ NI-650 分立半导体产品 晶体管 - FET，MOSFET - 射频

470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

RF Power Field Effect Transistors

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Radiation Hardened Octal D Flip-Flop, Three-State

Description The Intersil ACS374MS is a radiation hardened octal D-type flip-flop with three-state outputs. The eight edge-triggered flip-flops enter data into their registers on the low to high transition of clock (CP). The Output Enable (OEN) controls the three-state outputs and is independent o

Work horse clamp with increased performance and flexibility

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SUBMINIATURE FUSES

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SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz

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4.5A, 500kHz Step-Down Switching Regulator

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