LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

45 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

文件：98.14 Kbytes Page：6 Pages

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages

PRINTED CIRCUIT PINS

文件：118.18 Kbytes Page：1 Pages