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MR3504L

AUTOMOTIVE RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

EIC

MR3504L

AUTOMOTIVE RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

EIC

MR3504L

AUTOMOTIVE RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MR3504L

Automotive Rectifiers

EIC

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

PANJIT

強茂

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • The plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge overload ratings to 400 Amperes .

PANJIT

強茂

4-BIT SINGLE CHIP MICRO CONTROLLER???

文件:2.04509 Mbytes Page:62 Pages

NJRC

日本无线

4-BIT SINGLE CHIP MICRO CONTROLLER???

文件:2.04509 Mbytes Page:62 Pages

NJRC

日本无线

MR3504L产品属性

  • 类型

    描述

  • IF(AV)@TL(℃):

    150

  • VRRM(V):

    400

  • IFRM(A):

    75

  • IFSM(A):

    400

  • VF@IF(V):

    1.1

  • VF@IF(A):

    35

  • IR(µA):

    5

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