25 AMP OVERVOLTAGE TRANSIENT SUPPRESSORS

FEATURES\n•SUGGESTED REPLACEMENT FOR MR2520L, MR2525L, MR2535L\n•VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION\n (Solder Voids: Typical < 2%, Max. < 10% of Die Area)\n•LARGE DIE FOR HIGH POWER HEAVY DUTY PERFORMANCE\n•HIGH HEAT HANDLING CAPABILITY WITH V •SUGGESTED REPLACEMENT FOR MR2520L, MR2525L, MR2535L\n•VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION\n (Solder Voids: Typical < 2%, Max. < 10% of Die Area)\n•LARGE DIE FOR HIGH POWER HEAVY DUTY PERFORMANCE\n•HIGH HEAT HANDLING CAPABILITY WITH VERY LOW TH;

25 AMP OVERVOLTAGE TRANSIENT SUPPRESSORS

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OVERCOLTAGE TRANSIENT SUPPRESSORS 2.5K - 10K WATTS

OVERVOLTAGE TRANSIENT SUPPRESSOR ... designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as power

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i

Integrated Circuit TV Automatic Fine Tuning (AFT) Circuit