N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4476usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.ThisdeviceissuitableforuseasahighsideswitchinSMPSandgeneralpurposeapplications.StandardProductAO4476isPb-free(meetsROHS&Sony259specifications). Features

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=15A(VGS=10V) ●RDS(ON)

30VN-ChannelMOSFET

GeneralDescription TheAO4476AcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).ThisdeviceissuitableforuseasahighsideswitchinSMPSandgeneralpurposeapplications. ProductSummary VDS

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=10.3A,RDS(ON)