带重置定时器的超低 IQ 负载开关控制器

MP6412 是一款用于导通和关闭主电源 P-沟道 MOSFET 的负载开关控制器。MP6412 工作输入电压范围为 2.2V 至 12V。MP6412 为智能手机、平板电脑和其他便携式设备应用提供了节省空间的解决方案。\n\n MP6412 配有重置和供电时序功能，并带有工厂端可编程延时器。重置和供电时序功能由 RST0/RST1 和 OFF 信号控制。MP6412 还具有系统放电路径、待机模式和充电器插入检测功能。\n\n MP6412 还具有系统放电路径、待机模式和充电器插入检测功能。 • 输入电压范围为 2.2V 至 12V\n• 汽车 150Ω 输出放电功能\n• <1µA 运输模式电流\n• ESD HBM 2kV\n• 采用节省空间的 UTQFN-10(1.4mmx1.8mm) 封装;

封装/外壳：10-UFQFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ULTRA-LOW IQLOAD-SWITCH CONTROLL 集成电路（IC） 配电开关，负载驱动器

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v