Power MOSFET module

Feature：4V-gate drive available\nPolarity：N-ch×3, P-ch×3\nRoHS Compatible Product(s) (#)：Available Drain Current (Nch ID 5 A \nDrain Current (Pch ID -5 A \nCollector Power Dissipation (all devices operation)　@Ta=25°C PDT 4.4 W \nDrain-source Voltage (Nch VDSS 60 V \nDrain-source Voltage (Pch VDSS -60 V ;

TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type

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High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications

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High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications

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High speed and High performance 4-Bit Microcontroller

GENERAL DESCRIPTION The MSM6404A microcontroller is a low-power device implemented in complementary metal oxide semiconductor technology. The MSM6404A is optimized for high-speed processing and complicated-control applications. The MSM6404VS is a CMOS 4-bit microcontroller that employs an ex

Silicon Unilateral Switch (SUS)

Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02/°C temperature coefficient. A gate lead is provided to elim

RF POWER TRANSISTOR NPN SILICON

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5 V mixer/oscillator-PLL synthesizers for hyperband tuners

文件：221.55 Kbytes Page：32 Pages

5 V mixer/oscillator-PLL synthesizers for hyperband tuners

文件：221.55 Kbytes Page：32 Pages