TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25°C) • High collector current: IC (DC) = 3 A (max) • High DC current gain

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

文件：148.06 Kbytes Page：5 Pages

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

文件：148.06 Kbytes Page：5 Pages

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJN3304R

Wideband Operational Amplifier

文件：869.39 Kbytes Page：26 Pages

Wideband Operational Amplifier

文件：869.39 Kbytes Page：26 Pages

Wideband Operational Amplifier

文件：869.39 Kbytes Page：26 Pages

Wideband Operational Amplifier

文件：869.39 Kbytes Page：26 Pages