Power MOSFET module

Feature：4V-gate drive available\nPolarity：N-ch×2, P-ch×2\nRoHS Compatible Product(s) (#)：Available Drain Current (Nch ID 5 A \nDrain Current (Pch ID -5 A \nCollector Power Dissipation (all devices operation)　@Ta=25°C PDT 4 W \nDrain-source Voltage (Nch VDSS 60 V \nDrain-source Voltage (Pch VDSS -60 V ;

HIGH POWER SPEED SWITCHING APPLICATIONS H SWITCH DRIVER

文件：489.47 Kbytes Page：9 Pages

High Power High Speed Switching Applications H-Switch Driver

文件：211.34 Kbytes Page：11 Pages

High Power High Speed Switching Applications H-Switch Driver

文件：211.34 Kbytes Page：11 Pages

CMOS LOW VOLTAGE HIGH SPEED QUAD PRECISION ANALOG SWITCHES

GENERAL DESCRIPTION The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog switches specifically designed for low voltage, high speed applications where 0.2pC charge injection, 200pf sampling capacitor, and picoamp leakage current are important analog switch operating characteristics. These anal

CMOS LOW VOLTAGE HIGH SPEED QUAD PRECISION ANALOG SWITCHES

GENERAL DESCRIPTION The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog switches specifically designed for low voltage, high speed applications where 0.2pC charge injection, 200pf sampling capacitor, and picoamp leakage current are important analog switch operating characteristics. These anal

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UNR1212 (UN1212)× 2 elemen

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half