超低 500nA 静态电流（IQ）, 2V 至 5.5V 宽输入，1A 降压调节器，采用 1.2mmx1.6mm CSP 封装

MP28210 是一款含有 1A 高效率降压开关变换器的电源管理芯片。当负载电流在 µA 范围内时，nA 静态电流能提供极高的效率。\n\n MP28210 的最小输入电压低至 2V，可以允许系统直接由电池供电。恒定导通时间（COT）控制方案提供了快速瞬态响应和高轻载效率，并将系统应用对于输出电容值的需求降至最低。通过集成误差放大器可严格控制输出电压范围。通过 CTRL 引脚来控制启动/关断以及输出电压的选择。全方位保护功能包括欠压锁定保护（UVLO）、过流保护（OCP）和过温关断保护。\n\n MP28210 最大限度地减少了现有标准外部元器件的使用，采用小尺寸 CSP- • 超低 500nA 静态电流（IQ）\n• 宽工作输入电压范围：2.0V 至 5.5V\n• 7 种输出电压可选\n• 高达 1A 的输出电流\n• 连续导通模式（CCM）下开关频率为 1.5MHz\n• 压差模式下具有 100% 占空比\n• 0.25Ω 和 0.25Ω 内部功率 MOSFET 开关管\n• 逐周期过流保护（OCP）\n• 带打嗝保护模式的短路保护（SCP）\n• 采用 CSP-12（1.2mmx1.6mm）封装;

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ proces

Dual 10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The MB2821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 20-bit positive-edge triggered register • Multiple VCC and GND pins minimize switching noise • Live insertion/extraction permitted • Power

Dual 10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The MB2821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 20-bit positive-edge triggered register • Multiple VCC and GND pins minimize switching noise • Live insertion/extraction permitted • Power

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS