位置:首页 > IC中文资料 > MOTOROLA-MTB75N06HD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel 60-V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: | VBSEMI 微碧半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with | ADV 爱德微 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | |||
Fast Switching Speed 文件:65.68 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel 60-V (D-S) MOSFET 文件:1.27408 Mbytes Page:7 Pages | VBSEMI 微碧半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
|||
IDT |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IDT |
24+ |
39 |
|||||
原装 |
25+ |
TO-220 |
20300 |
原装特价75N06G即刻询购立享优惠#长期有货 |
|||
VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
24+ |
PLCC |
25843 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
O |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
IDT |
2318+ |
BGA |
6800 |
十年专业专注 优势渠道商正品保证公司现货 |
|||
IDT |
24+ |
PLCC |
6540 |
原装现货/欢迎来电咨询 |
|||
VBsemi |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
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DdatasheetPDF页码索引
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