High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

6 引脚 DIP 高压光电晶体管输出光耦合器

4N38M、H11D1M、H11D3M 和 MOC8204M 都是耦合至光隔离器的光电晶体管类型。 一个砷化镓红外发光二极管与一个高压NPN硅光电二极管耦合。 该器件提供标准塑封6引脚双列直插封装。 • 高电压：\n• MOC8204M, BVCEO= 400 V\n• H11D1M, BVCEO= 300 V\n• H11D3M, BVCEO= 200 V\n• 安全和法规认证：\n• UL1577，4170 VACRMS（1 分钟）\n• DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压;

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

Tone ringer IC for telephone set

Tone ringer IC for telephone set

NICAM DECODER

DESCRIPTION The TDA8204B performs two main functions, first one is NICAM decoding, second one is audio signal recovery (DAC) combined with audio signal switching (Matrix). An I2S output is provided for digital audio when required and all functions of both the TDA8204B and the TDA8205 are access

LOW FREQUENCY POWER AMPLIFIER

文件：438.19 Kbytes Page：10 Pages

LOW FREQUENCY POWER AMPLIFIER

文件：438.19 Kbytes Page：10 Pages