6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

Property of Lite-on Only

FEATURES * Isolation voltage between input and output Viso : 5,000Vrms * 6pin DIP zero-cross optoisolators triac driver output * High repetitive peak off-state voltage VDRM : Min. 800V * High critical rate of rise of off-state voltage ( dv/dt : MIN. 800V / µs ) * Dual-in-line package : MO

6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 V Peak)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interfac

三路驱动器输出光耦合器，6 引脚 DIP 800V 零交叉

MOC3081M、MOC3082M和MOC3083M器件包含GaAs红外线发光二极管，该二极管光学耦合至单片硅检测器，可执行电压过零检测双向三端双向可控硅开关驱动器的功能。它们专为与逻辑系统和 240 V AC 线路供电设备之间的接口中的分立电源三端双向可控硅开关搭配使用而设计，这类设备有固态继电器、工业控制装置、电机、电磁阀和消费家电等。 • 简化 240 VAC 电源的逻辑控制\n• 过零电压，最小化导通和辐射线路噪声\n• 800 V 峰值阻塞电压\n• 卓越的静态 dv/dt\n• 典型值为 1500 V/μs，保证 600 V/μs\n• 安全和法规认证\n• UL1577，4,170 VACRMS（1 分钟）\n• DIN EN/IEC60747-5-5;

封装/外壳：6-DIP（0.400"，10.16mm） 包装：卷带（TR） 描述：OPTOISOLATOR 5KV TRIAC 6DIP 隔离器 光隔离器 - 双向可控硅，SCR 输出

封装/外壳：6-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：OPTOISOLATOR 4.17KV TRIAC 6DIP 隔离器 光隔离器 - 双向可控硅，SCR 输出

白色胶体可控硅光耦（过零触发ZC）

6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 V Peak)

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6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

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6-Pin Zero-Cross Optoisolators Triac Driver Output (800 Volt Peak)

文件：293.38 Kbytes Page：11 Pages

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (800 Volts Peak) The MOC3081, MOC3082 and MOC3083 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the function of Zero Voltage Crossing bilateral triac drivers. They a

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

Optoisolator NPN Darlington Transistor Output

Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–darlington in a 6–Lead DIP type package. Features: • High Sensitivity: 1mA on the Input will Sink a TTL gate • High Isolation: 3550VDC, 1012Ω, 0.5pF