8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient P

Small Ouline Optocouplers Transistor Output

Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the

8-pin SOIC Dual-Channel Phototransistor Output Optocoupler

These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for high−density applications, and eliminate the need for through−the−bo

Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

Description The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for th

Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

Description The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for th

8-pin SOIC Dual-Channel Phototransistor Output Optocoupler

These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for high−density applications, and eliminate the need for through−the−bo