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位置：首页 > IC中文资料 > MMUN2131

MMUN2131晶体管资料

  • MMUN2131别名：MMUN2131三极管、MMUN2131晶体管、MMUN2131晶体三极管

  • MMUN2131生产厂家：

  • MMUN2131制作材料：Si-P+R

  • MMUN2131性质：表面帖装型 （SMD）

  • MMUN2131封装形式：贴片封装

  • MMUN2131极限工作电压：50V

  • MMUN2131最大电流允许值：0.1A

  • MMUN2131最大工作频率：<1MHZ或未知

  • MMUN2131引脚数：3

  • MMUN2131最大耗散功率：0.4W

  • MMUN2131放大倍数：β>35

  • MMUN2131图片代号：H-15

  • MMUN2131vtest：50

  • MMUN2131htest：999900

  • MMUN2131atest：0.1

  • MMUN2131wtest：0.4

  • MMUN2131代换 MMUN2131用什么型号代替：DTA123EK,

MMUN2131价格

参考价格：￥0.0754

型号：MMUN2131LT1G 品牌：ON SEMICONDUCTOR 备注：这里有MMUN2131多少钱，2026年最近7天走势，今日出价，今日竞价，MMUN2131批发/采购报价，MMUN2131行情走势销售排行榜，MMUN2131报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMUN2131

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis tor with a monolithic bias network cons

LRC

乐山无线电

MMUN2131

Bias Resistor Transistor PNP Silicon

Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free

WEITRON

MMUN2131L

PNP 双极数字晶体管 (BRT)

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant;

ONSEMI

安森美半导体

MMUN2131LT1

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti

LRC

乐山无线电

MMUN2131LT1

PNP SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monoli

MOTOROLA

摩托罗拉

MMUN2131LT3

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti

LRC

乐山无线电

MMUN2131RLT1

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis tor with a monolithic bias network cons

LRC

乐山无线电

MMUN2131L

PNP Transistors with Monolithic Bias Resistor Network

文件：103.89 Kbytes Page：11 Pages

ONSEMI

安森美半导体

MMUN2131L

Digital Transistors (BRT)

文件：176.35 Kbytes Page：11 Pages

ONSEMI

安森美半导体

MMUN2131L

Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

文件：133.25 Kbytes Page：10 Pages

ONSEMI

安森美半导体

MMUN2131LT1

PNP SILICON BIAS RESISTOR TRANSISTOR

文件：188.18 Kbytes Page：12 Pages

ONSEMI

安森美半导体

MMUN2131LT1G

Digital Transistors (BRT)

文件：176.35 Kbytes Page：11 Pages

ONSEMI

安森美半导体

MMUN2131LT1G

Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

文件：133.25 Kbytes Page：10 Pages

ONSEMI

安森美半导体

MMUN2131LT1G

PNP Transistors with Monolithic Bias Resistor Network

文件：103.89 Kbytes Page：11 Pages

ONSEMI

安森美半导体

MMUN2131LT1G

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS PNP 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

ONSEMI

安森美半导体

KA2131

TV VERTICAL OUTPUT CIRCUIT

TV VERTICAL OUTPUT CIRCUIT The KA2131 is a monolithic integrated circuit designed for the vertical output stage in color television receivers. FUNCTIONS • Driver stage. • Output stage. • Flyback generators. • Pulse shapers.

SAMSUNG

三星

MPIC2131

3 HIGH SIDE & 3 LOW SIDE DRIVER

3-HIGH SIDE & 3-LOW SIDE DRIVER The MPIC2131 is a high voltage, high speed, power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3–Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

MOTOROLA

摩托罗拉

MPIC2131P

3 HIGH SIDE & 3 LOW SIDE DRIVER

3-HIGH SIDE & 3-LOW SIDE DRIVER The MPIC2131 is a high voltage, high speed, power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3–Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

MOTOROLA

摩托罗拉

RF2131

HIGH EFFICIENCY AMPS/ETACS AMPLIFIER

Product Description The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in AMPS and ETACS handheld equipment, spread spectrum s

RFMD

威讯联合

RF2131PCBA

HIGH EFFICIENCY AMPS/ETACS AMPLIFIER

Product Description The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in AMPS and ETACS handheld equipment, spread spectrum s

RFMD

威讯联合

MMUN2131产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Polarity：

    PNP

  • IC Continuous (A)：

    0.1

  • V(BR)CEO Min (V)：

    50

  • hFE Min：

    8

  • R1 (kΩ)：

    2.2

  • R2 (kΩ)：

    2.2

  • R1/R2 Typ：

    1

  • Vi(off) Max (V)：

    0.5

  • Vi(on) Min (V)：

    2

  • Package Type：

    SOT-23-3

MMUN2131供应商更多...

更新时间：2026-5-15 14:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
MMUN2131LT1G
ON
07+
SOT-23
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市宇创芯科技有限公司
MMUN2131LT1G
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
询价
深圳深宇韬电子科技有限公司
MMUN2131LT1G
ON
2023+
SOT
8800
正品渠道现货 终端可提供BOM表配单。
询价
深圳市凯睿晟科技有限公司
MMUN2131LT1G
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
询价
深圳市众芯源半导体有限公司
MMUN2131LT1G
ON(安森美)
25+
NA
18000
原装优势现货
询价
深圳市华来深电子有限公司
MMUN2131LT1G
ON
23+
SOT-23
8560
受权代理!全新原装现货特价热卖!
询价
深圳市百诺芯科技有限公司
MMUN2131
LRC/乐山
23+
SOT-23
24190
原装正品代理渠道价格优势
询价
深圳市明盛嘉电子科技有限公司
MMUN2131LT1G
ON/安森美
26+
SOT-23
43600
全新原装现货,假一赔十
询价
深圳市科恒伟业电子有限公司
MMUN2131LT1G
ON
1739+
SOT
3000
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市一线半导体有限公司
MMUN2131LT1G
LRC
24+
SOT-23
30000
询价

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    一般描述 该LM129是多方面的，当前的温度补偿的6.9V稳压管的参考与精密 10至100倍以上的分立二极管少动态阻抗。建于一单硅芯片，LM129使用有源电路来缓冲允许内部齐纳器件工作在0.5 mA至15毫安范围内几乎没有变化性能。该LM129是选择的温度系数为0.001可用，0.002，0.005和0.01％/ c.这些新的引用也有良好的长期稳定性和低噪音。齐纳击穿一个新的地下使用的LM129提供低噪声和更好的长期稳定性比coventional集成电路齐纳二极管。进一步Zener和温度补偿晶体管是由一个平面进程，以便他们有免疫问题困扰普通的齐纳二极管。例如，几乎没有在齐纳

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