MMUN2113晶体管资料
MMUN2113别名：MMUN2113三极管、MMUN2113晶体管、MMUN2113晶体三极管
MMUN2113生产厂家：
MMUN2113制作材料：Si-P+R
MMUN2113性质：表面帖装型 （SMD）
MMUN2113封装形式：贴片封装
MMUN2113极限工作电压：50V
MMUN2113最大电流允许值：0.1A
MMUN2113最大工作频率：<1MHZ或未知
MMUN2113引脚数：3
MMUN2113最大耗散功率：0.4W
MMUN2113放大倍数：β>60
MMUN2113图片代号：H-15
MMUN2113vtest：50
MMUN2113htest：999900
- MMUN2113atest：0.1
MMUN2113wtest：0.4
MMUN2113代换 MMUN2113用什么型号代替：UN2113,
MMUN2113价格
参考价格：￥0.0671
型号：MMUN2113LT1G 品牌：ONSemi 备注：这里有MMUN2113多少钱，2026年最近7天走势，今日出价，今日竞价，MMUN2113批发/采购报价，MMUN2113行情走势销售排行榜，MMUN2113报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMUN2113 | Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis tor with a monolithic bias network cons | LRC 乐山无线电 |   | |
MMUN2113 | Bias Resistor Transistor PNP Silicon Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | | |
MMUN2113 | 数字三极管 | CHINABASE 创基电子 | | |
PNP SILICON BIAS RESISTOR TRANSISTOR | ETC 知名厂家 | ETC | | |
Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti | LRC 乐山无线电 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monoli | MOTOROLA 摩托罗拉 | | ||
Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti | LRC 乐山无线电 | | ||
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis tor with a monolithic bias network cons | LRC 乐山无线电 | | ||
Digital Transistors (BRT) 文件：202.32 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA 文件：113.75 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 k 文件：148.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR 文件：188.18 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
TRANS PREBIAS PNP 246MW SOT23-3 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA 文件：113.75 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 k 文件：148.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：202.32 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS PNP 246MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：202.32 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA 文件：113.75 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 k 文件：148.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
HIGH AND LOW SIDE DRIVER The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Th | MOTOROLA 摩托罗拉 | | ||
HIGH AND LOW SIDE DRIVER The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Th | MOTOROLA 摩托罗拉 | | ||
HIGH AND LOW SIDE DRIVER The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Th | MOTOROLA 摩托罗拉 | | ||
LOW VOLTAGE AUDIO POWER AMPLIFIER 文件：156.89 Kbytes Page：4 Pages | NJRC 日本无线 | | ||
LOW VOLTAGE AUDIO POWER AMPLIFIER 文件：156.89 Kbytes Page：4 Pages | NJRC 日本无线 | |
MMUN2113产品属性
- 类型
描述
- R1(KΩ)：
47
- R2(KΩ)：
47
- VO(V)：
50
- IO(A)：
-0.1
- PD(W)：
0.2
- IO(OFF)(uA)：
-0.5
- IO(OFF)(V)：
-50
- VO(ON)(V)：
-0.25
- VO(ON)IO(mA)：
-10
- VO(ON)II(mA)：
-0.3
- G1：
>80
- G1VO(V)：
-10
- G1IO(mA)：
-5
- PackageOutline：
SOT-23
- Arrays：
BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
SOT-23-3 |
32360 |
ONSEMI/安森美全新特价MMUN2113LT1G即刻询购立享优惠#长期有货 |
|||
ON |
202009+ |
SOT-23-3 |
4770 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
onsemi(安森美) |
25+ |
SOT-23 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
24+/25+ |
170 |
原装正品现货库存价优 |
||||
ON |
25+ |
SOT-23 |
958 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON/安森美 |
24+ |
TSSOP |
10000 |
原装进口只做订货 寻找优势渠道合作 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON(安森美) |
23+ |
SOT-23-3 |
15876 |
公司只做原装正品,假一赔十 |
|||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
MMUN2113规格书下载地址
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一般描述 该LM129是多方面的，当前的温度补偿的6.9V稳压管的参考与精密 10至100倍以上的分立二极管少动态阻抗。建于一单硅芯片，LM129使用有源电路来缓冲允许内部齐纳器件工作在0.5 mA至15毫安范围内几乎没有变化性能。该LM129是选择的温度系数为0.001可用，0.002，0.005和0.01％/ c.这些新的引用也有良好的长期稳定性和低噪音。齐纳击穿一个新的地下使用的LM129提供低噪声和更好的长期稳定性比coventional集成电路齐纳二极管。进一步Zener和温度补偿晶体管是由一个平面进程，以便他们有免疫问题困扰普通的齐纳二极管。例如，几乎没有在齐纳
2013-3-17
DdatasheetPDF页码索引
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