isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

600V 0.29(ohm) N-channel MOSFET

文件：1.08658 Mbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

600V 0.29(ohm) N-channel MOSFET

文件：1.43302 Mbytes Page：10 Pages

600V 0.29(ohm) N-channel MOSFET

文件：1.43302 Mbytes Page：10 Pages

600V 0.29ohm N-channel MOSFET

文件：1.32053 Mbytes Page：10 Pages