P-Channel Enhancement Mode Vertical D-MOS Transistor

FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed and line transformer drivers CAUTION • The device is supplied in an antistatic package • T

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

P-Channel Enhancement Mode FET

Features Fast switching times Compliant to RoHS (w/o exemp.) REACH, Conflict Minerals 1) Typical Applications Signal processing Drivers Logic level converter Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data

丝印代码：SP；P-Channel Enhancement Mode FET P-Kanal FET - Anreicherungstyp

Features Fast switching times Compliant to RoHS (w/o exemp.) REACH, Conflict Minerals 1) Typical Applications Signal processing Drivers Logic level converter Commercial grade

MOSFETs (Field Effect Transistors)

P-Channel Enhancement Mode FET P-Kanal FET - Anreicherungstyp

Features Fast switching times Compliant to RoHS (w/o exemp.) REACH, Conflict Minerals 1) Typical Applications Signal processing Drivers Logic level converter Commercial grade

小信号金氧半電晶體

MOSFETs (Field Effect Transistors)