SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 4.3 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request MECHANICAL DATA • Case: SOT-23, Mold

SURFACE MOUNT SILICON ZENER DIODES

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ZENER DIODES

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齐纳二极管

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 4.3 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request MECHANICAL DATA • Case: SOT-323, Mol

Zener Diodes

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE ZENER 7.5V 350MW SOT23 分立半导体产品 二极管 - 齐纳 - 单

SURFACE MOUNT SILICON ZENER DIODES

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封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SURFACE MOUNT SILICON ZENER DIOD 分立半导体产品 二极管 - 齐纳 - 单

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

Voltage regulator diodes

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. FEATURES • Total power dissipation : max. 500 mW • Tolerance series:±5 • Working voltage range : nom. 3.0 to 75 V

Photo Module for High Data Rates PCM Remote Control

Description The TSOP52 – series are miniaturized SMD–IR Receiver Modules for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP52 i

Silicon Z-Diodes

Features ● Very sharp reverse characteristic ● Very high stability ● Electrical data identical with the devices 1N5221B 1N5267B ● Low reverse current level ● VZ–tolerance ± 5 Applications    Voltage stabilization