PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: MMBTA42. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment.

SMALL SIGNAL PNP TRANSISTOR

SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS MMBTA42 APPLICATIONS ■ VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) ■ TELEPHO

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

HIGH VOLTAGE TRANSISTOR PNP SILICON

High Voltage Transistor PNP Silicon

PNP High Voltage Amplifier

PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76.

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > 300V • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBTA42 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE TELEPHONE)

EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATIONS.

PNP Silicon High Voltage Transistor

PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets ​​​​​​​ and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBT92 (NPN) • Pb-free (RoHS compliant) package1) • Qualified

Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP High Voltage Amplifier

FEATURES ● Epitaxial planar die construction. Pb ● Complementary NPN type available (MMBTA42). ● Ideal for medium power amplification and switching.

HIGH VOLTAGE PNP TRANSISTOR

DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High Collector-Emitter voltage: VCEO= -300V * Collector Dissipation: PC(MAX)=350mW

PNP Silicon High Voltage Transistors

PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the NPN transistors MMBTA42 and MMBTA43 are recommended.

PNP Silicon High Voltage Transistor

Features • Surface Mount SOT-23 Package • Capable of 300mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: 2D • Halogen free ava

PNP HIGH VOLTAGE TRANSISTOR

VOLTAGE 300 Volts POWER 225 mWatts FEATURES • PNP silicon, planar design • High voltage (max. 300V) • In compliance with EU RoHS 2002/95/EC directives

This device is designed for high voltage driver applications.

PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76.

Plastic-Encapsulate Transistors

FEATURES High voltage transistor

TRANSISTOR(PNP)

FEATURES High voltage transistor

PNP High Voltage Amplifier

PNP high-voltage transistor

FEATURES · Low current (max. 100 mA) · High voltage (max. 300 V). APPLICATIONS · Telephony · Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: MMBTA42.

SOT-23 Plastic-Encapsulate Transistors

FEATURES High voltage transistor

Plastic-Encapsulate Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 300V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 300V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MMBTA92: PNP High Voltage Amplifier

PNP, 300V, 0.5A, SOT23

PNP Silicon High Voltage Transistor

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > 300V • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBTA42 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP

HIGH VOLTAGE PNP TRANSISTOR

DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High Collector-Emitter voltage: VCEO= -300V * Collector Dissipation: PC(MAX)=350mW

Plastic-Encapsulate Transistors

FEATURES  High voltage transistor  -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

TRANSISTOR

DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) APPLICATION High Voltage Amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Low Collector-Emitter Saturation Voltage ● High Breakdown Voltage

General Purpose Transistor

Features - High voltage transistor.

GENERAL PURPOSE TRANSISTORS HIGH VOLTAGE TRANSISTOR PNP SILICON

DESCRIPTION The MBTA92 is available in SOT 23 p ackage FEATURES  High voltage  For Telephony or Professional communication equipment applications  Availabl e in SOT 23 p ackage