MMBTA55晶体管资料
MMBTA55别名：MMBTA55三极管、MMBTA55晶体管、MMBTA55晶体三极管
MMBTA55生产厂家：美国摩托罗拉半导体公司
MMBTA55制作材料：
MMBTA55性质：低频或音频放大 （LF）_通用 （G）
MMBTA55封装形式：
MMBTA55极限工作电压：60V
MMBTA55最大电流允许值：0.5A
MMBTA55最大工作频率：<1MHZ或未知
MMBTA55引脚数：
MMBTA55最大耗散功率：0.3W
MMBTA55放大倍数：
MMBTA55图片代号：NO
MMBTA55vtest：60
MMBTA55htest：999900
- MMBTA55atest：0.5
MMBTA55wtest：0.3
MMBTA55代换 MMBTA55用什么型号代替：3DK30C,
MMBTA55价格
参考价格：￥0.1775
型号：MMBTA55 品牌：Fairchild 备注：这里有MMBTA55多少钱，2026年最近7天走势，今日出价，今日竞价，MMBTA55批发/采购报价，MMBTA55行情走势销售排行榜，MMBTA55报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA55 | Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 |   | |
MMBTA55 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Types Available (MMBTA55 / MMBTA56) • Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics | | |
MMBTA55 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Low Power Amplification and Switching ● Complementary NPN Type: MMBTA05 / MMBTA06 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards f | DIODES 美台半导体 | | |
MMBTA55 | EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY AMPLIFIER) AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES • Complementary to MMBTA05. • Driver Stage Application of 20 to 25 Watts Amplifiers. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | |
MMBTA55 | Driver PNP Transistors * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities | WEITRON | | |
MMBTA55 | General Purpose Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | | |
MMBTA55 | 丝印代码：2H；PNP General Purpose Transistor FEATURES • Epitaxial planar die construction. • Complementary NPN types available (MMBTA05/MMBTA06) APPLICATIONS • Ideal for medium NPN amplification and switching. | BILIN 银河微电 | | |
MMBTA55 | SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance | TAITRON | | |
MMBTA55 | PNP General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • This device is designed for general purpose amplifier applications at collector current to 300mA • Markin : MMBTA55=2H/ | MCC | | |
MMBTA55 | Driver Transistor * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities | SECOS 喜可士 | | |
MMBTA55 | NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | |
MMBTA55 | TRANSISTOR(PNP) FEATURES • Driver Transistors | HTSEMI 金誉半导体 | | |
MMBTA55 | Driver Transistors Features • SOT-23 package | KEXIN 科信电子 | | |
MMBTA55 | PNP MMBTA55 AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | |
MMBTA55 | 丝印代码：2H；SOT-23 Plastic-Encapsulate Transistors FEATURES Driver Transistors | DGNJDZ 南晶电子 | | |
MMBTA55 | 丝印代码：K2H；SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：374.94 Kbytes Page：3 Pages | GWSEMI 唯圣电子 | | |
MMBTA55 | 晶体管 | JSCJ 长晶科技 | | |
MMBTA55 | 通用型双极晶体管 | PANJIT 強茂 | | |
MMBTA55 | PNP, 60V, 0.5A, SOT23 | DIODES 美台半导体 | | |
MMBTA55 | Silicon PNP transistor in a SOT-23 Plastic Package 文件：741.75 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
MMBTA55 | 丝印代码：2H；PNP General Purpose Transistor 文件：117.93 Kbytes Page：3 Pages | BILIN 银河微电 | | |
MMBTA55 | 丝印代码：2H；PNP Plastic-Encapsulate Transistors 文件：1.20026 Mbytes Page：5 Pages | JINGHENG 晶恒 | | |
MMBTA55 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MMBTA55 | 丝印代码：2H；PNP General Purpose Transistor 文件：576.3 Kbytes Page：2 Pages | LUGUANG 鲁光电子 | | |
MMBTA55 | PNP General Purpose Amplifier 文件：455.58 Kbytes Page：7 Pages | RECTRON 丽正 | | |
MMBTA55 | PNP General Purpose Amplifier 文件：226.18 Kbytes Page：4 Pages | MCC | | |
MMBTA55 | 丝印代码：2H；Driver Transistors 文件：245.87 Kbytes Page：3 Pages | FS | | |
MMBTA55 | PNP General Purpose Amplifier 文件：257.47 Kbytes Page：4 Pages | MCC | | |
MMBTA55 | SOT-23 Plastic-Encapsulate Transistors 文件：731.74 Kbytes Page：3 Pages | JIANGSU 长电科技 | | |
MMBTA55 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：108.57 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MMBTA55 | EPITAXIAL PLANAR PNP TRANSISTOR 文件：40.71 Kbytes Page：2 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | |
MMBTA55 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：80.84 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MMBTA55 | PNP (DRIVER TRANSISTOR) 文件：27.89 Kbytes Page：1 Pages | SAMSUNG 三星 | | |
MMBTA55 | PNP General Purpose Amplifier 文件：2.02879 Mbytes Page：13 Pages | FAIRCHILD 仙童半导体 | | |
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Low Power Amplification and Switching ● Complementary NPN Type: MMBTA05 / MMBTA06 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards f | DIODES 美台半导体 | | ||
PNP General Purpose Transistor Features • Epitaxial planar die construction. • Complementary NPN type available(MMBTA05/MMBTA06). • Low collector-emitter saturation voltage. • RoHS compliant package Application • Ideal for medium NPN amplification and switching. | BWTECH | | ||
NPN AND PNP HIGH VOLTAGE TRANSISTOR NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC= 500mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/95/EC directives. | PANJIT 強茂 | | ||
PNP MMBTA55 AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | ||
PNP MMBTA55 AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | ||
Driver Transistors Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
PNP MMBTA55 AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | ||
PNP MMBTA55 AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | ||
Driver Transistors Driver Transistors PNP Silicon | MOTOROLA 摩托罗拉 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon | LRC 乐山无线电 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors(PNP Silicon) Driver Transistors PNP Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Driver Transistors Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
PNP General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • This device is designed for general purpose amplifier applications at collector current to 300mA • Markin : MMBTA55=2H/ | MCC | |
MMBTA55产品属性
- 类型
描述
- Compliance：
Pb-freeHalide free
- Status：
Active
- Description：
PNP General Purpose Amplifier
- Polarity：
- Type：
- VCE(sat) Max (V)：
- IC Cont. (A)：
- VCEO Min (V)：
- hFE Min：
- hFE Max：
- fT Min (MHz)：
- PTM Max (W)：
- Package Type：
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
CJ/长电 |
25+ |
SOT-23 |
32000 |
CJ/长电全新特价MMBTA55即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
23+ |
SOT-23-3 |
13759 |
公司只做原装正品,假一赔十 |
|||
扬杰科技 |
21+ |
210 |
只做原装鄙视假货15118075546 |
||||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
SAMSUNG/三星 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
SOT-23 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AUK |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
CJ长电 |
25+ |
SOT-23 |
45000 |
原厂原装,价格优势 |
|||
ON |
24+ |
SOT23 |
6980 |
原装现货,可开13%税票 |
MMBTA55规格书下载地址
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DdatasheetPDF页码索引
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