NPN High Voltage Amplifier

NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48.

NPN High-Voltage Amplifier

Features • This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48.

NPN high-voltage transistor

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment.

NPN Silicon Transistor for High Voltages

NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

HIGH VOLTAGE RANSISTOR

DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE, TELEPHONE)

HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > 300V • Ideal for Medium Power Amplification and Switching • Complementary PNP Type: MMBTA92 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP

Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reele

NPN Silicon High Voltage Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 300mWatts of Power Dissipation • Con

High-Voltage NPN Transistor Surface Mount

High-Voltage NPN Transistor Surface Mount Pb Lead(Pb)-Free

丝印代码：1D；NPN High Voltage Amplifier

FEATURES • Epitaxial planar die construction. • Complementary PNP type available (MMBTA92). • Ideal for medium power amplification and switching. APPLICATIONS • NPN High voltage amplifier.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92(PNP)

NPN High Voltage Transistor

FEATURES NPN High Voltage Transistor

TRANSISTOR(NPN)

FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP)

High Voltage Transistors

NPN Silicon Type Features This device is designed for application as a video output to drive color CRT and other high voltage applications

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP)

High Voltage Transistors

■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP)

High breakdown voltage

FEATURES ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP)

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE 300 Volts POWER 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives

General Purpose Transistor

FEATURES • Plastic-Encapsulate Transistors • Power dissipation & Collector current Pcm: 0.3W Icm: 0.3A • High voltage V(BR): 300V

NPN Silicon High Voltage Transistors

NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended.

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES • Epitaxial Planar Die Construction. • Complementary PNP Type Available (MMBTA92). • Ideal for Medium Power Amplification and Switching.

HIGH VOLTAGE TRANSISTOR NPN SILICON

High Voltage Transistor NPN Silicon

丝印代码：1D；NPN High Voltage Amplifier

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA92). ● Ideal for medium power amplification and switching. APPLICATIONS ● NPN High voltage amplifier.

SMD High Voltage Transistor (NPN)

SMD High Voltage Transistor (NPN) Features • This device is designed for application as a video output to drive color CRT and other high voltage applications. • RoHS compliance

SMALL SIGNAL NPN TRANSISTOR

Description The device is manufactured in Epitaxial Planar technology. Features ■ Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The PNP complementary type is MMBTA92 Applications ■ Video amplifier circuits (rgb cathode current c

NPN Silicon High Voltage Transistors

NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended.

High breakdown voltage

FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP)

NPN Silicon

NPN Silicon

丝印代码：7D；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBTA92 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • AEC-Q101 qualified 3. Applications • Telephony • Professional co

丝印代码：1D；Plastic-Encap sulate Transistors

FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)

丝印代码：1D；NPN Transistors

■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP)

Plastic-Encapsulate Transistors

FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP)

丝印代码：1D；Plastic-Encapsulate Transistors

Features: High breakdown voltage; Applications: It is used for ordinary high-voltage amplification and is complementary to MMBTA92.

丝印代码：1D；NPN Transistors

Features ● For switching and amplifier applications. ● High voltage

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP)

丝印代码：1D；NPN Silicon General Purpose Transistors

VOLTAGE 300 Volts CURRENT 0.5 Ampers FEATURES • High current capacity in compact package.IC =0.5 A. • Epitaxial planar type. • Pb-Free Package is available.

NPN High Voltage Amplifier

FEATURES • Epitaxial planar die construction. • Complementary PNP type available (MMBTA92) • Ideal for medium power amplification and switching. APPLICATIONS • NPN High voltage amplifier.

丝印代码：1D；HighVoltageTransistors

High Voltage Transistors ● We declare that the material of product compliance with RoHS requirements.

SOT-23 Plastic-Encapsulate Transistors

FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)

NPN high-voltage transistor

NPN high-voltage transistor in a SOT23 plastic package.\n PNP complement: MMBTA92. • Low current (max. 100 mA)\n• High voltage (max. 300 V).\n• AEC-Q101 qualified;

NPN, 300V, 0.5A, SOT23

NPN Silicon Transistor for High Voltages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANSISTOR (NPN)

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丝印代码：1D；NPN Plastic-Encapsulate Transistors

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High breakdown voltage

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Silicon NPN transistor in a SOT-23 Plastic Package

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 300V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Plastic Encapsulated Transistor

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丝印代码：1D；NPN High Voltage Amplifier

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NPN Silicon High Voltage Transistor

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