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MMBTA42晶体管资料
MMBTA42别名：MMBTA42三极管、MMBTA42晶体管、MMBTA42晶体三极管
MMBTA42生产厂家：美国摩托罗拉半导体公司
MMBTA42制作材料：
MMBTA42性质：低频或音频放大 （LF）_通用 （G）
MMBTA42封装形式：
MMBTA42极限工作电压：300V
MMBTA42最大电流允许值：0.5A
MMBTA42最大工作频率：<1MHZ或未知
MMBTA42引脚数：
MMBTA42最大耗散功率：0.3W
MMBTA42放大倍数：
MMBTA42图片代号：NO
MMBTA42vtest：300
MMBTA42htest：999900
- MMBTA42atest：0.5
MMBTA42wtest：0.3
MMBTA42代换 MMBTA42用什么型号代替：
MMBTA42价格
参考价格：￥0.1346
型号：MMBTA42 品牌：NXP 备注：这里有MMBTA42多少钱，2025年最近7天走势，今日出价，今日竞价，MMBTA42批发/采购报价，MMBTA42行情走势销售排行榜，MMBTA42报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA42 | NPN high-voltage transistor DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment. | Philips 飞利浦 |   | |
MMBTA42 | SMALL SIGNAL NPN TRANSISTOR Description The device is manufactured in Epitaxial Planar technology. Features ■ Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The PNP complementary type is MMBTA92 Applications ■ Video amplifier circuits (rgb cathode current c | STMICROELECTRONICS 意法半导体 | | |
MMBTA42 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FEATURES • Epitaxial Planar Die Construction. • Complementary PNP Type Available (MMBTA92). • Ideal for Medium Power Amplification and Switching. | TRSYS Transys Electronics | | |
MMBTA42 | HIGH VOLTAGE TRANSISTOR NPN SILICON High Voltage Transistor NPN Silicon | ZOWIE 智威 | | |
MMBTA42 | NPN High Voltage Amplifier NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MMBTA42 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • BVCEO > 300V • Ideal for Medium Power Amplification and Switching • Complementary PNP Type: MMBTA92 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP | DIODES 美台半导体 | | |
MMBTA42 | NPN Silicon High Voltage Transistor Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 300mWatts of Power Dissipation • Con | MCC 美微科 | | |
MMBTA42 | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE, TELEPHONE) HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. | KECKEC CORPORATION KEC株式会社 | | |
MMBTA42 | NPN Silicon Transistor for High Voltages NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | |
MMBTA42 | High Voltage Transistors NPN Silicon Type Features This device is designed for application as a video output to drive color CRT and other high voltage applications | COMCHIP 典琦 | | |
MMBTA42 | High-Voltage NPN Transistor Surface Mount High-Voltage NPN Transistor Surface Mount Pb Lead(Pb)-Free | WEITRON | | |
MMBTA42 | High Voltage Transistors ■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) | KEXIN 科信电子 | | |
MMBTA42 | SMD High Voltage Transistor (NPN) SMD High Voltage Transistor (NPN) Features • This device is designed for application as a video output to drive color CRT and other high voltage applications. • RoHS compliance | TAITRON | | |
MMBTA42 | NPN Silicon High Voltage Transistors NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended. | SEMTECH_ELEC 先之科半导体 | | |
MMBTA42 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92(PNP) | DAYA 大亚电器集团 | | |
MMBTA42 | Surface mount High Voltage Transistors Surface mount High Voltage Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reele | Diotec 德欧泰克 | | |
MMBTA42 | NPN High Voltage Amplifier FEATURES • Epitaxial planar die construction. • Complementary PNP type available (MMBTA92). • Ideal for medium power amplification and switching. APPLICATIONS • NPN High voltage amplifier. | BILIN 银河微电 | | |
MMBTA42 | NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 300 Volts POWER 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | |
MMBTA42 | General Purpose Transistor FEATURES • Plastic-Encapsulate Transistors • Power dissipation & Collector current Pcm: 0.3W Icm: 0.3A • High voltage V(BR): 300V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
MMBTA42 | TRANSISTOR(NPN) FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP) | HTSEMI 金誉半导体 | | |
MMBTA42 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) | JIANGSU 长电科技 | | |
MMBTA42 | NPN Silicon High Voltage Transistors NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended. | DGNJDZ 南晶电子 | | |
MMBTA42 | NPN High Voltage Transistor FEATURES NPN High Voltage Transistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 | | |
MMBTA42 | NPN Silicon General Purpose Transistors VOLTAGE 300 Volts CURRENT 0.5 Ampers FEATURES • High current capacity in compact package.IC =0.5 A. • Epitaxial planar type. • Pb-Free Package is available. | NIUHANG 纽航电子 | | |
MMBTA42 | NPN Transistors ■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) | YFWDIODE 佑风微电子 | | |
MMBTA42 | HIGH VOLTAGE RANSISTOR DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW | UTC 友顺 | | |
MMBTA42 | NPN High Voltage Amplifier FEATURES • Epitaxial planar die construction. • Complementary PNP type available (MMBTA92) • Ideal for medium power amplification and switching. APPLICATIONS • NPN High voltage amplifier. | KISEMICONDUCTOR | | |
MMBTA42 | NPN Silicon NPN Silicon | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
MMBTA42 | HighVoltageTransistors High Voltage Transistors ● We declare that the material of product compliance with RoHS requirements. | FS | | |
MMBTA42 | Plastic-Encapsulate Transistors Features: High breakdown voltage; Applications: It is used for ordinary high-voltage amplification and is complementary to MMBTA92. | SHENZHENSLS 三联盛科技股份 | | |
MMBTA42 | Plastic-Encap sulate Transistors FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) | GWSEMI 唯圣电子 | | |
MMBTA42 | NPN high-voltage transistor 1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBTA92 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • AEC-Q101 qualified 3. Applications • Telephony • Professional co | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
MMBTA42 | SOT-23 Plastic-Encapsulate Transistors FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
MMBTA42 | High breakdown voltage FEATURES ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) | LEIDITECH 雷卯电子 | | |
MMBTA42 | Plastic-Encapsulate Transistors FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | | |
MMBTA42 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NPN ) Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | | |
MMBTA42 | High breakdown voltage FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP) | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 | | |
MMBTA42 | NPN Transistors Features ● For switching and amplifier applications. ● High voltage | PJSEMI 平晶半导体 | | |
MMBTA42 | NPN High Voltage Amplifier FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA92). ● Ideal for medium power amplification and switching. APPLICATIONS ● NPN High voltage amplifier. | LUGUANG 鲁光电子 | | |
MMBTA42 | TRANSISTOR (NPN) 文件：891.58 Kbytes Page：3 Pages | BYTESONIC 松浩电子 | | |
MMBTA42 | HIGH VOLTAGE TRANSISTOR 文件：109.19 Kbytes Page：4 Pages | UTC 友顺 | | |
MMBTA42 | NPN Plastic-Encapsulate Transistors 文件：1.41739 Mbytes Page：5 Pages | JINGHENG 晶恒 | | |
MMBTA42 | NPN Silicon High-Voltage Transistors 文件：530.77 Kbytes Page：7 Pages | Infineon 英飞凌 | | |
MMBTA42 | High breakdown voltage 文件：105.99 Kbytes Page：2 Pages | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 | | |
MMBTA42 | NPN Plastic Encapsulated Transistor 文件：465.39 Kbytes Page：3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
MMBTA42 | NPN Silicon High Voltage Transistor 文件：215.52 Kbytes Page：3 Pages | MCC 美微科 | | |
MMBTA42 | NPN Silicon High Voltage Transistor 文件：246.97 Kbytes Page：3 Pages | MCC 美微科 | | |
MMBTA42 | NPN Transistors 文件：1.4347 Mbytes Page：2 Pages | KEXIN 科信电子 | | |
MMBTA42 | Silicon NPN transistor in a SOT-23 Plastic Package 文件：809.19 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
MMBTA42 | FAIRCHILD Small Signal Transistors 文件：628.43 Kbytes Page：1 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MMBTA42 | NPN High Voltage Amplifier 文件：166.45 Kbytes Page：4 Pages | BILIN 银河微电 | | |
MMBTA42 | SMD High Voltage NPN Transistors 文件：152.76 Kbytes Page：2 Pages | Diotec 德欧泰克 | | |
MMBTA42 | NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage 文件：71.44 Kbytes Page：6 Pages | Infineon 英飞凌 | | |
MMBTA42 | High-Voltage NPN Transistor Surface Mount 文件：209.42 Kbytes Page：4 Pages | WEITRON | | |
MMBTA42 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：111.7 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MMBTA42 | High Voltage Transistors 文件：112.07 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | |
MMBTA42 | Small signal NPN transistor 文件：94.34 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | |
MMBTA42 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件：217.63 Kbytes Page：4 Pages | RECTRON | | |
MMBTA42 | NPN Silicon High Voltage Transistor 文件：106.87 Kbytes Page：3 Pages | MCC 美微科 | | |
MMBTA42 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：109.89 Kbytes Page：3 Pages | DIODES 美台半导体 | |
MMBTA42产品属性
- 类型
描述
- 型号
MMBTA42
- 功能描述
两极晶体管 - BJT NPN General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
0102+ |
SOT |
20 |
原装现货海量库存欢迎咨询 |
|||
ON/安森美 |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON |
24+ |
NA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
DIODES/美台 |
20+ |
SOT-23 |
120000 |
只做原装 可免费提供样品 |
|||
鲁光电子 |
21+ |
SOT-23 |
100 |
全新原装鄙视假货 |
|||
SLKOR/萨科微 |
25+ |
30000 |
原装现货,全系列可订货 |
||||
ST/意法半导体 |
2023+ |
TO-236-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
友台 |
23+ |
SOT-23 |
13500 |
优势原装现货假一赔十 |
|||
ON/安森美 |
24+ |
SOT-23 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
ON |
21+ |
DNA |
6000 |
公司现货,有挂就有货。 |
MMBTA42规格书下载地址
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MMBTA42数据表相关新闻
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