丝印代码：3S；NPN General Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

丝印代码：3S；NPN General-Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

HIGH VOLTAGE SWITCHING TRANSISTOR

■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Plastic Encapsulate Transistor

Features ​​​​​​​• Halogen free available upon request by adding suffix -HF • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=180V • Operating And Storage Temperatures –55OC to 150OC • Capable of 0.3Watts of Power Dissipation • Marking: G1 • Lead Free Finish/RoHS Compliant (P

SMD General Purpose NPN Transistors

Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01 g Case material UL 94V-0 Solder & assembly co

High Voltage NPN Transistors

High Voltage NPN Transistors P/b Lead(Pb)-Free

丝印代码：G1；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

NPN High Voltage Transistor

■ FEATURES NPN High Voltage Transistor

TRANSISTOR(NPN)

FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

丝印代码：G1；High Voltage Transistors

High Voltage Transistors FEATURE ● We declare that the material of product compliance with RoHS requirements.

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V • Collector current IC = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)

General Purpose Transistor

FEATURES Power dissipation PCM: 0.3 W (Tamb=25°C) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications.

丝印代码：G1；TRANSISTOR (PNP)

FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT5401). ● Ideal for Medium Power Amplification and Switching

HIGH VOLTAGE TRANSISTOR NPN SILICON

High Voltage Transistor NPN Silicon

丝印代码：G1；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High voltage, complementary pair with MMBT5401. Applications General purpose high voltage amplifier.

丝印代码：G1；NPN Silicon

NPN Silicon

丝印代码：G1；TRANSISTOR(NPN)

FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching

丝印代码：G1；NPN Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

High Voltage Transistors

FEATURE ● We declare that the material of product compliance with RoHS requirements.

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching

TRANSISTOR(NPN)

文件：387.03 Kbytes Page：3 Pages

Plastic-Encapsulate Transistors

文件：219.35 Kbytes Page：2 Pages

丝印代码：G1；Plastic-Encapsulate Transistors

文件：471.27 Kbytes Page：2 Pages

丝印代码：G1；NPN Transistor

文件：1.29511 Mbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 160V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 160V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

通用型双极晶体管

小信号三极管

NPN, 160V, 0.6A, SOT23

丝印代码：G1；NPN Plastic-Encapsulate Transistors

文件：768.33 Kbytes Page：5 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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160V NPN SMALL SIGNAL TRANSISTOR

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HIGH VOLTAGE SWITCHING TRANSISTOR

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TRANSISTOR (NPN)

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NPN Transistors

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丝印代码：G1；NPN General Purpose Transistor

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丝印代码：G1；TRANSISTOR (NPN)

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NPN Transistors

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NPN Plastic Encapsulate Transistor

文件：155.05 Kbytes Page：2 Pages

NPN Plastic Encapsulate Transistor

文件：166.96 Kbytes Page：2 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：128.259 Kbytes Page：4 Pages

SMD General Purpose PNP Transistors

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Surface Mount General Purpose Si-Epi-Planar Transistors

文件：102.32 Kbytes Page：2 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：419.38 Kbytes Page：4 Pages

HIGH VOLTAGE SWITCHING TRANSISTOR

文件：149.89 Kbytes Page：4 Pages

High Voltage Transistors NPN Silicon

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丝印代码：3S；NPN General-Purpose Amplifier

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丝印代码：3S；FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

High Voltage Transistors

文件：97.56 Kbytes Page：6 Pages

SMD General Purpose NPN Transistors

Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01 g Case material UL 94V-0 Solder & assembly co

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

HIGH VOLTAGE SWITCHING TRANSISTOR

■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain