NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT5401). ● Ideal for Medium Power Amplification and Switching

High Voltage NPN Transistors

High Voltage NPN Transistors P/b Lead(Pb)-Free

HIGH VOLTAGE SWITCHING TRANSISTOR

■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

General Purpose Transistor

FEATURES Power dissipation PCM: 0.3 W (Tamb=25°C) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

TRANSISTOR(NPN)

FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

PNP Plastic Encapsulate Transistor

Features ​​​​​​​• Halogen free available upon request by adding suffix -HF • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=180V • Operating And Storage Temperatures –55OC to 150OC • Capable of 0.3Watts of Power Dissipation • Marking: G1 • Lead Free Finish/RoHS Compliant (P

HIGH VOLTAGE TRANSISTOR NPN SILICON

High Voltage Transistor NPN Silicon

NPN General Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

NPN Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications.

NPN High Voltage Transistor

■ FEATURES NPN High Voltage Transistor

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High voltage, complementary pair with MMBT5401. Applications General purpose high voltage amplifier.

High Voltage Transistors

FEATURE ● We declare that the material of product compliance with RoHS requirements.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V • Collector current IC = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)

High Voltage Transistors

High Voltage Transistors FEATURE ● We declare that the material of product compliance with RoHS requirements.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

SMD General Purpose NPN Transistors

Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01 g Case material UL 94V-0 Solder & assembly co

NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

TRANSISTOR (PNP)

FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching

TRANSISTOR(NPN)

FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching

NPN General-Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

NPN Silicon

NPN Silicon

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 160V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 160V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

通用型双极晶体管

小信号三极管

NPN, 160V, 0.6A, SOT23

TRANSISTOR(NPN)

文件：387.03 Kbytes Page：3 Pages

TRANSISTOR (NPN)

文件：917.13 Kbytes Page：4 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Plastic-Encapsulate Transistors

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HIGH VOLTAGE SWITCHING TRANSISTOR

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160V NPN SMALL SIGNAL TRANSISTOR

文件：309.41 Kbytes Page：2 Pages

NPN Transistor

文件：1.29511 Mbytes Page：3 Pages

Plastic-Encapsulate Transistors

文件：219.35 Kbytes Page：2 Pages

NPN General Purpose Transistor

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NPN Plastic-Encapsulate Transistors

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NPN Plastic Encapsulate Transistor

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FAIRCHILD Small Signal Transistors

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NPN Transistors

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HIGH VOLTAGE SWITCHING TRANSISTOR

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NPN Transistors

文件：1.04525 Mbytes Page：2 Pages

NPN General-Purpose Amplifier

文件：216.64 Kbytes Page：9 Pages

SMD General Purpose PNP Transistors

文件：145.6 Kbytes Page：2 Pages

NPN Plastic Encapsulate Transistor

文件：166.96 Kbytes Page：2 Pages

High Voltage Transistors NPN Silicon

文件：127.52 Kbytes Page：6 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：128.259 Kbytes Page：4 Pages

Surface Mount General Purpose Si-Epi-Planar Transistors

文件：102.32 Kbytes Page：2 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：419.38 Kbytes Page：4 Pages

High Voltage Transistors

文件：97.56 Kbytes Page：6 Pages

SMD General Purpose NPN Transistors

Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01 g Case material UL 94V-0 Solder & assembly co

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

HIGH VOLTAGE SWITCHING TRANSISTOR

■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

HIGH VOLTAGE SWITCHING TRANSISTOR

■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain