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MMBT5401LT1价格
参考价格：￥0.0670
型号：MMBT5401LT1G 品牌：ON 备注：这里有MMBT5401LT1多少钱，2025年最近7天走势，今日出价，今日竞价，MMBT5401LT1批发/采购报价，MMBT5401LT1行情走势销售排行榜，MMBT5401LT1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT5401LT1 | High Voltage Transistor High Voltage Transistor PNP Silicon | Motorola 摩托罗拉 |   | |
MMBT5401LT1 | High Voltage Transistor(PNP Silicon) High Voltage Transistor PNP Silicon | LRC 乐山无线电 | | |
MMBT5401LT1 | High Voltage Transistor(PNP Silicon) High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | |
MMBT5401LT1 | PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. | TGS | | |
MMBT5401LT1 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | AVICTEK | | |
MMBT5401LT1 | SOT-23 Plastic-Encapsulate Transistors
| WINNERJOIN 永而佳 | | |
MMBT5401LT1 | High Voltage Transistor FEATURE ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H | WILLAS 威伦电子 | | |
MMBT5401LT1 | Transistors | WILLAS 威伦电子 | | |
High Voltage Transistor High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
High Voltage Transistor PNP Silicon High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | ||
High Voltage Transistor(PNP Silicon) High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | ||
SOT-23 Plastic-Encapsulate Transistors 文件：154.92 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 150V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
双极晶体管 - 双极结型晶体管(BJT) SS HV XSTR PNP 150V | ONSEMI 安森美半导体 | | ||
High Voltage Transistor FEATURE ● Pb-Free package is available. | LRC 乐山无线电 | | ||
High Voltage Transistor FEATURE ● Pb-Free package is available. | LRC 乐山无线电 | | ||
We declare that the material of product compliance with RoHS requirements FEATURE ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. | LEIDITECH 雷卯电子 | | ||
High Voltage Transistor RoHS requirements. 文件：107.85 Kbytes Page：5 Pages | LRC 乐山无线电 | |
MMBT5401LT1产品属性
- 类型
描述
- 型号
MMBT5401LT1
- 功能描述
两极晶体管 - BJT 500mA 160V PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON |
24+ |
SOT23 |
12000 |
原装正品 价格优势 |
|||
ON/安森美 |
23+/24+ |
SOT23 |
9865 |
主推型号,原装正品,终端BOM表可配单,可开13点税 |
|||
ON |
18+ |
SOT23 |
30000 |
ON专营→可提供17发票 |
|||
ON |
22+ |
SOT-23 |
12000 |
原装正品可支持验货,欢迎咨询 |
|||
ON |
2241 |
SOT-23 |
230 |
原装现货17377264928微信同号 |
|||
ON(安森美) |
2511 |
4512 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
COILCRA |
23+ |
SOT-23 |
8860 |
受权代理!全新原装现货特价热卖! |
|||
LRC/乐山 |
23+ |
SOT23-3 |
5500 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
onsemi(安森美)爆款 |
25+ |
原装 |
25607 |
onsemi(安森美)爆款特价现货MMBT5401LT1G即刻询购立享优惠#长期有订 |
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MMBT5401LT1规格书下载地址
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MMBT5401LT1数据表相关新闻
MMBT5551-7-F全新原装现货
MMBT5551-7-F集电极—发射极很大电压 VCEO: 160 V 集电极—基极电压 VCBO: 180 V 发射极 - 基极电压 VEBO: 6 V 集电极—射极饱和电压: 200 mV 很大直流电集电极电流: 600 mA Pd-功率耗散: 300 mW 增益带宽产品fT: 300 MHz
2022-3-22MMBT5551 支持原装现货订货型号 SOT-23
MMBT5551 CJ/长电 SOT-23
2021-4-22MMBT4403 CJ/长电 SOT-23 支持原装长电现货订货，欢迎咨询
MMBT4403 CJ/长电 SOT-23
2021-3-9MMBT5551
MMBT5551,全新原装当天发货或门市自取0755-82732291.
2020-7-1MMBT4403:24000PCS，原装现货
MMBT4403 品牌：CJ 数量：24000PCS 公司热卖原装现货
2019-10-23MMBT5401
MMBT5401丝印 2L ，全新原装当天发货或门市自取0755-82732291.
2019-3-23
DdatasheetPDF页码索引
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