PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT5551) Ideal for Medium Power Amplification and Switching

HIGH VOLTAGE TRANSISTOR PNP SILICON

High Voltage Transistor PNP Silicon

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type - MMBT5551 • Ideal for Low Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for High Re

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

High Voltage PNP Transistors

High Voltage PNP Transistors P/b Lead(Pb)-Free

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * Collector-Emitter Voltage: VCEO=-150V * Collector Dissipation: Pc(max)=350mW * High current gain

Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflahenmontage

Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT5551). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching

PNP Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to MMBT5551 ● Ideal for medium power amplification and switching

TRANSISTOR(PNP)

FEATURES ● Complementary to MMBT5551 ● Ideal for medium power amplification and switching

PNP Plastic Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=160V • Operating And Storage Temperatures –55°C to 150°C • Capable of 0.3Watts of Power Dissipation • Marking: 2L • Lead Free Finish/RoHS Compliant (P Suffix

General PurposeTransistor

FEATURES Ideal for medium power amplification and switching

HIGH VOLTAGE TRANSISTOR

FEATURES • In compliance with EU RoHS 2002/95/EC directives

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High voltage, complementary Pair with MMBT5551. Applications General purpose high voltage amplifier.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( P NP ) Features ● Complementary to MMBT5551 ● Ideal for Medium Power Amplification and Switching

Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching

Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching

PNP High Voltage Transistor

■ FEATURES PNP High Voltage Transistor

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to MMBT5551 ● Ideal for Medium Power Amplification and Switching

High Voltage Transistor

FEATURE ● We declare that the material of product compliance with RoHS requirements.

SMD General Purpose NPN Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP silicon

PNP Silicon

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching

PNP Switching Transistor

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1.

SOT-23 Plastic-Encapsulate Transistors

FEATURES  Complementary to MMBT5551  Ideal for Medium Power Amplification and Switching

TRANSISTOR (PNP)

FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching

PNP Epitaxial Silicon Transistor

Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage.

PNP Transistor

文件：1.45881 Mbytes Page：4 Pages

Plastic-Encapsulate Transistors

文件：557.93 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 150V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 160V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Plastic Encapsulate Transistor

文件：439.39 Kbytes Page：4 Pages

PNP Transistors

文件：1.18113 Mbytes Page：2 Pages

TRANSISTOR (PNP)

文件：293.03 Kbytes Page：3 Pages

SMD General Purpose PNP Transistors

文件：145.6 Kbytes Page：2 Pages

PNP Plastic-Encapsulate Transistors

文件：704.86 Kbytes Page：5 Pages

PNP Transistors

文件：1.17043 Mbytes Page：2 Pages

HIGH VOLTAGE SWITCHING TRANSISTOR

文件：104.95 Kbytes Page：4 Pages

PNP General Purpose Transistor

文件：183.3 Kbytes Page：4 Pages

SMD General Purpose PNP Transistors

文件：145.91 Kbytes Page：2 Pages

TRANSISTOR (PNP)

文件：267.09 Kbytes Page：2 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：360.14 Kbytes Page：4 Pages

PNP Plastic Encapsulate Transistor

文件：168.26 Kbytes Page：2 Pages

Surface Mount General Purpose Si-Epi-Planar Transistors

文件：111.52 Kbytes Page：2 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：128.27 Kbytes Page：4 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件：275.04 Kbytes Page：5 Pages

PNP Epitaxial Silicon Transistor

Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage.

PNP Epitaxial Silicon Transistor

Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage.

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type - MMBT5551 • Ideal for Low Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for High Re

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * Collector-Emitter Voltage: VCEO=-150V * Collector Dissipation: Pc(max)=350mW * High current gain

TRANSISTOR(PNP)

FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

General Purpose Transistor

Features - Epitaxial planar die construction. - Complementary NPN type available (MMBT5551-G). - Ideal for medium power amplification and switching.

High Voltage Transistor

High Voltage Transistor Halogen-free type Lead free product FEATURE ● We declare that the material of product compliance with RoHS requirements.

PNP Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

High Voltage Transistor

High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

PNP Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * Collector-Emitter Voltage: VCEO=-150V * Collector Dissipation: Pc(max)=350mW * High current gain

High Voltage Transistor(PNP Silicon)

High Voltage Transistor PNP Silicon