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MMBT4403晶体管资料
MMBT4403别名：MMBT4403三极管、MMBT4403晶体管、MMBT4403晶体三极管
MMBT4403生产厂家：美国摩托罗拉半导体公司
MMBT4403制作材料：
MMBT4403性质：射频/高频放大 （HF）_通用 （G）
MMBT4403封装形式：
MMBT4403极限工作电压：40V
MMBT4403最大电流允许值：0.6A
MMBT4403最大工作频率：<1MHZ或未知
MMBT4403引脚数：
MMBT4403最大耗散功率：0.3W
MMBT4403放大倍数：
MMBT4403图片代号：NO
MMBT4403vtest：40
MMBT4403htest：999900
- MMBT4403atest：0.6
MMBT4403wtest：0.3
MMBT4403代换 MMBT4403用什么型号代替：3CK10B,
MMBT4403价格
参考价格：￥0.1185
型号：MMBT4403 品牌：FAIRCHILD 备注：这里有MMBT4403多少钱，2025年最近7天走势，今日出价，今日竞价，MMBT4403批发/采购报价，MMBT4403行情走势销售排行榜，MMBT4403报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT4403 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable (MMBT4401) IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics |  |   |
MMBT4403 | PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MMBT4403 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT4401) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Standa | DIODES Diodes Incorporated |  | |
MMBT4403 | PNPGeneralPurposeAmplifier Features •OperatingandStorageJunctionTemperatures:-55°Cto150°C •Capableof350mWattsofPowerDissipation •SurfaceMountSOT-23Package •Ic=-600mA •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabil | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
MMBT4403 | SwitchingTransistorPNPSilicon SwitchingTransistorPNPSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology |  | |
MMBT4403 | SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.–Gewichtca.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedan | Diotec Diotec Semiconductor |  | |
MMBT4403 | SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | Diotec Diotec Semiconductor | | |
MMBT4403 | SmallSignalTransistor(PNP) Features •PNPSiliconEpitaxialPlanarTransistorfor switchingandamplifierapplications. •Ascomplementarytype,theNPNtransistor MMBT4401isrecommended. •ThistransistorisalsoavailableintheTO-92case withthetypedesignation2N4403. | VAISH Vaishali Semiconductor |  | |
MMBT4403 | PNPGeneralPurposeTransistor FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable (MMBT4401). ●Alsoavailableinleadfreeversion. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Idealformediumpoweramplificationandswitching. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
MMBT4403 | PNPGENERALPURPOSESWITCHINGTRANSISTOR VOLTAGE40VPOWER225mW FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-600mA •Complimentary(NPN)device:MMBT4401 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | |
MMBT4403 | PNPSiliconGeneralPurposeTransistor PNPSiliconGeneralPurposeTransistor AscomplementarytypestheNPNtransistor MMBT4401isrecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | |
MMBT4403 | TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES Switchingtransistor | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
MMBT4403 | SMALLSIGNALTRANSISTORS(PNP) FEATURES ◆PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,theNPN transistorMMBT4401isrecommended. ◆ThistransistorisalsoavailableintheTO-92casewith thetypedesignation2N4403. | GE GE Industrial Company |  | |
MMBT4403 | GeneralPurposeAmplifier [HIROO] GeneralPurposeAmplifier ■Features ●Collectorcurrentto500mA | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | |
MMBT4403 | PNPGENERALPURPOSEAMPLIFIER PNPGENERALPURPOSEAMPLIFIER DESCRIPTION TheUTCMMBT4403isdesignedforuseasageneralpurposeamplifierandswitchrequiringcollectorcurrentsupto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
MMBT4403 | SwitchingTransistor PNPSiliconSwitchingTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | |
MMBT4403 | SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Collectorcurrentsupto500mA. Applications Generalpurposeamplifierandswitchrequiring. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
MMBT4403 | PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MMBT4403 | PNPPlastic-EncapsulateTransistors ■Features ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryNPNTypeAvailable(MMBT4401) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
MMBT4403 | Plastic-EncapsulateTransistors FEATURES Switchingtransistor | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 |  | |
MMBT4403 | Plastic-EncapsulateTransistors FEATURES Switchingtransistor | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 |  | |
MMBT4403 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Switchingtransistor | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | |
MMBT4403 | PNPSiliconGeneralPurposeTransistor PNPSiliconGeneralPurposeTransistor AscomplementarytypestheNPNtransistor MMBT4401isrecommended. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
MMBT4403 | PNPSwitchingTransistor ■FEATURES PNPSwitchingTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 |  | |
MMBT4403 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) Features ●SwitchingTransistor | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | |
MMBT4403 | TRANSISTOR(PNP) FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable (MMBT4401) IdealforMediumPowerAmplificationand Switching | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | |
MMBT4403 | SOT-23Plastic-EncapsulateTransistors FEATURES Switchingtransistor | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | |
MMBT4403 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MMBT4403 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 40V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
MMBT4403 | PNPGeneralPurposeTransistor 文件：178.83 Kbytes Page：4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | | |
MMBT4403 | PNPTransistors 文件：282.32 Kbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
MMBT4403 | TRANSISTOR(PNP) 文件：599.36 Kbytes Page：4 Pages | BYTESONICBytesonic Electronics Co., Ltd. 松浩电子松浩电子股份有限公司 |  | |
MMBT4403 | PNPTransistor 文件：1.3598 Mbytes Page：4 Pages | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 |  | |
MMBT4403 | Plastic-EncapsulateTransistors 文件：288.28 Kbytes Page：1 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 |  | |
MMBT4403 | PNPPlastic-EncapsulateTransistors 文件：1.3274 Mbytes Page：5 Pages | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 |  | |
MMBT4403 | PNPGeneralPurposeAmplifier 文件：280.71 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
MMBT4403 | PNPGENERALPURPOSEAMPLIFIER 文件：195.7 Kbytes Page：5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
MMBT4403 | Plastic-EncapsulatedMultipleTransistors??QuadSurfaceMount(Case751B-SO-16)??NPN/PNP) 文件：53.1 Kbytes Page：1 Pages | ALLIED Allied Components International |  | |
MMBT4403 | SMDGeneralPurposeNPNTransistors 文件：143.95 Kbytes Page：2 Pages | Diotec Diotec Semiconductor | | |
MMBT4403 | PNPGeneralPurposeAmplifier 文件：205.7 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
MMBT4403 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件：137.94 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | |
MMBT4403 | SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP) 文件：349.13 Kbytes Page：6 Pages | RECTRON Rectron Semiconductor |  | |
MMBT4403 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件：80.91 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | |
MMBT4403 | NPNGeneralPurposeAmplifier 文件：102.85 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT4401) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Standa | DIODES Diodes Incorporated | | | |
PNPGENERALPURPOSEAMPLIFIER PNPGENERALPURPOSEAMPLIFIER DESCRIPTION TheUTCMMBT4403isdesignedforuseasageneralpurposeamplifierandswitchrequiringcollectorcurrentsupto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
SwitchingTransistorPNPSilicon SwitchingTransistor PNPSilicon Leadfreeproduct Halogen-freetype | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 |  | | |
PNPEpitaxialSiliconTransistor PNPEpitaxialSiliconTransistor SwitchingTransistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SwitchingTransistor SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SwitchingTransistor SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors PNPSilicon •RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 |  | | |
TRANSISTOR(NPN) FEATURES •Powerdissipation PCM:0.225W(Tamb=25℃) •PluseDrain ICM:-0.6mA •Reversevoltage V(BR)CBO:-40V •Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | | |
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | AVICTEK Avic Technology |  | | |
GeneralPurposeTransistor(PNPSilicon) GeneralPurposeTransistors PNPSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |  | | |
SwitchingTransistor SwitchingTransistor PNPSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
SwitchingTransistor(PNPSilicon) SwitchingTransistor PNPSilicon Features •Pb−FreePackageisAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNPEPITAXIALPLANARTRANSISTOR Description TheMMBT4403LT1isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | TGS Tiger Electronic Co.,Ltd |  | | |
SwitchingTransistor(PNPSilicon) SwitchingTransistor PNPSilicon Features •Pb−FreePackageisAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SwitchingTransistor SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SwitchingTransistor SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MMBT4403产品属性
- 类型
描述
- 型号
MMBT4403
- 功能描述
两极晶体管 - BJT SOT-23 PNP GEN PUR
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
24+ |
SOT-23 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FSC |
2016+ |
SOT23 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
10+ |
SOT323 |
54000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
24+ |
NA/ |
45000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
23+ |
SOT-23 |
8215 |
原厂原装 |
|||
ON |
22+23+ |
SOT23 |
8000 |
新到现货，只做原装进口 |
|||
ON(安森美) |
2024+ |
SOT-23-3 |
500000 |
诚信服务,绝对原装原盘 |
|||
onsemi |
两年内 |
6000 |
原装正品现货,德为本,正为先,通天下! |
||||
ON |
1950+ |
SOT23 |
9852 |
只做原装正品现货!或订货假一赔十! |
MMBT4403芯片相关品牌
MMBT4403规格书下载地址
MMBT4403参数引脚图相关
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MMBT4403数据表相关新闻
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2022-10-19MMBT4403 CJ/长电 SOT-23 支持原装长电现货订货，欢迎咨询
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晶体管类型：NPN 电流-集电极（Ic）（最大值）：600mA 电压-集射极击穿（最大值）：40V 不同?Ib，Ic时的?Vce饱和值（最大值）：750mV@50mA，500mA 不同?Ic，Vce?时的DC电流增益（hFE）（最小值）：100@150mA，1V 功率-最大值：300mW 频率-跃迁：250MHz 安装类型：表面贴装 封装/外壳：TO-236-3，SC
2020-9-3MMBT4403:24000PCS，原装现货
MMBT4403 品牌：CJ 数量：24000PCS 公司热卖原装现货
2019-10-23MMBT5401
MMBT5401丝印2L，全新原装当天发货或门市自取0755-82732291.
2019-3-23
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