PNP General Purpose Amplifier

Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA.

PNP General Purpose Amplifier

Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA.

PNP GENERAL PURPOSE AMPLIFIER

PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA.

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT4401) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standa

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. – Gewicht ca. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped an

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP General Purpose Amplifier

Features • Operating and Storage Junction Temperatures: -55°C to 150°C • Capable of 350mWatts of Power Dissipation • Surface Mount SOT-23 Package • Ic=-600mA • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammabil

Switching Transistor PNP Silicon

Switching Transistor PNP Silicon P/b Lead(Pb) - Free

PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT4401). ● Also available in lead free version. ● Ideal for medium power amplification and switching. APPLICATIONS ● Ideal for medium power amplification and switching.

SMALL SIGNAL TRANSISTORS (PNP)

FEATURES ◆ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ◆ As complementary type, the NPN transistor MMBT4401 is recommended. ◆ This transistor is also available in the TO-92 case with the type designation 2N4403.

PNP Switching Transistor

■ FEATURES PNP Switching Transistor

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Switching transistor

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Switching transistor

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 40V POWER 225mW FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC =-600mA • Complimentary (NPN) device: MMBT4401

Switching Transistor

PNP Silicon Switching Transistor

PNP Silicon General Purpose Transistor

PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401 is recommended.

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching

Small Signal Transistor (PNP)

Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case with the type designation 2N4403.

PNP Silicon General Purpose Transistor

PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401 is recommended.

Plastic-Encapsulate Transistors

FEATURES Switching transistor

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Collector currents up to 500 mA. Applications General purpose amplifier and switch requiring.

TRANSISTOR (PNP)

FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching

PNP Plastic-Encapsulate Transistors

■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type Available (MMBT4401)

Plastic-Encapsulate Transistors

FEATURES Switching transistor

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( P NP ) Features ● Switching Transistor

SOT-23 Plastic-Encapsulate Transistors

FEATURES Switching transistor

General Purpose Amplifier

[HIROO] General Purpose Amplifier ■ Features ● Collector current to 500mA

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 40V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

晶体管

小信号三极管

PNP, 40V, 0.6A, SOT23

TRANSISTOR(PNP)

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PNP General Purpose Amplifier

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PNP General Purpose Amplifier

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PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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PNP GENERAL PURPOSE AMPLIFIER

文件：195.7 Kbytes Page：5 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT4401) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standa

PNP GENERAL PURPOSE AMPLIFIER

PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA.

Switching Transistor PNP Silicon

Switching Transistor PNP Silicon Lead free product Halogen-free type

PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor Switching Transistor

Switching Transistor

Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Switching Transistor

Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Switching Transistor(PNP Silicon)

Switching Transistor PNP Silicon Features • Pb−Free Package is Available

General Purpose Transistor(PNP Silicon)

General Purpose Transistors PNP Silicon

Switching Transistor

Switching Transistor PNP Silicon

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP EPITAXIAL PLANAR TRANSISTOR

Description The MMBT4403LT1 is designed for general purpose applications requiring high breakdown voltages.

TRANSISTOR (NPN)

FEATURES • Power dissipation PCM: 0.225 W (Tamb=25℃) • Pluse Drain ICM: -0.6 mA • Reverse voltage V(BR)CBO: -40 V • Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

General Purpose Transistors

PNP Silicon • RoHS product for packing code suffix G Halogen free product for packing code suffix H