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MMBT2369晶体管资料
MMBT2369别名:MMBT2369三极管、MMBT2369晶体管、MMBT2369晶体三极管
MMBT2369生产厂家:美国摩托罗拉半导体公司
MMBT2369制作材料:
MMBT2369性质:中速 (MS)_开关管 (SW)
MMBT2369封装形式:
MMBT2369极限工作电压:40V
MMBT2369最大电流允许值:0.5A
MMBT2369最大工作频率:<1MHZ或未知
MMBT2369引脚数:
MMBT2369最大耗散功率:0.3W
MMBT2369放大倍数:
MMBT2369图片代号:NO
MMBT2369vtest:40
MMBT2369htest:999900
- MMBT2369atest:0.5
MMBT2369wtest:0.3
MMBT2369代换 MMBT2369用什么型号代替:3DG120B,
MMBT2369价格
参考价格:¥0.1265
型号:MMBT2369 品牌:Fairchild 备注:这里有MMBT2369多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT2369批发/采购报价,MMBT2369行情走势销售排行榜,MMBT2369报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT2369 | NPN Switching Transistor NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT2369 | NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | BILIN 银河微电 | ||
MMBT2369 | Surface Mount Si-Epi-Planar Switching Transistors Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging ta | Diotec 德欧泰克 | ||
MMBT2369 | NPN Silicon Switching Transistor NPN Silicon Switching Transistor | SEMTECH_ELEC 先之科半导体 | ||
MMBT2369 | Plastic-Encapsulate Transistors FEATURES Epitaxial planar die construction. Ultra-small surface mount package. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
MMBT2369 | Epitaxial planar die construction. FEATURES Epitaxial planar die construction. Ideal for medium power amplification and switching. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
MMBT2369 | NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | LUGUANG 鲁光电子 | ||
MMBT2369 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:管件 描述:TRANS NPN 15V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
MMBT2369 | NPN General Purpose Amplifier 文件:145.87 Kbytes Page:3 Pages | BILIN 银河微电 | ||
Surface Mount Si-Epi-Planar Switching Transistors Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging ta | Diotec 德欧泰克 | |||
NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | BILIN 银河微电 | |||
NPN Silicon Switching Transistor NPN Silicon Switching Transistor | SEMTECH_ELEC 先之科半导体 | |||
NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | LUGUANG 鲁光电子 | |||
NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 15V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method | PANJIT 強茂 | |||
NPN Switching Transistor NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPN Switching Transistor NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
Switching Transistors(NPN Silicon) Switching Transistor NPN Silicon | LRC 乐山无线电 | |||
Switcing Transistors Switching Transistors NPN Silicon | ONSEMI 安森美半导体 | |||
Switching Transistors Switching Transistors NPN Silicon | Motorola 摩托罗拉 | |||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
GENERAL PURPOSE TRANSISTORS Features -Power dissipation PC=0.3W | COMCHIP 典琦 | |||
Switcing Transistors Switching Transistors NPN Silicon | ONSEMI 安森美半导体 | |||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
Switching Transistors Switching Transistors NPN Silicon | Motorola 摩托罗拉 | |||
Switcing Transistors Switching Transistors NPN Silicon | ONSEMI 安森美半导体 | |||
Switching Transistors(NPN Silicon) Switching Transistor NPN Silicon | LRC 乐山无线电 | |||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
Switching Transistors 文件:386.11 Kbytes Page:6 Pages | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | |||
NPN Switching Transistor 文件:127.04 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPN General Purpose Amplifier 文件:145.87 Kbytes Page:3 Pages | BILIN 银河微电 | |||
NPN General Purpose Amplifier 文件:146.66 Kbytes Page:3 Pages | BILIN 银河微电 | |||
NPN General Purpose Amplifier 文件:146.66 Kbytes Page:3 Pages | BILIN 银河微电 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 15V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | PANJIT 強茂 | |||
Switching Transistors NPN Silicon 文件:88.35 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors 文件:195.81 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors NPN Silicon 文件:88.35 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors NPN Silicon 文件:88.35 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors NPN Silicon 文件:88.35 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors NPN Silicon 文件:88.35 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors 文件:195.81 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switching Transistors 文件:195.81 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
600nA 14.5KHz DUAL CMOS RAIL-TO-RAIL IO OPAMP W/ RF FILTER DESCRIPTION The AO2369 has a high gain-bandwidth product of 14.5KHz, a slew rate of 6V/ms, and a quiescent current of 600nA/amplifier at 5V. The AO2369 is designed to provide optimal performance in low voltage and low noise systems. They provide rail-to-rail output swing into heavy loads. T | AITSEMI 创瑞科技 | |||
28V/30A VID Control Synchronous EZBuckTM Regulator General Description The AOZ2369VQI is a high-efficiency, easy-to-use DC/ DC synchronous buck regulators capable of operation from a 4V to 28V input bus. The device is capable of supplying 30A of continuous output current with an output voltage adjustment from 0V to 1.8V by controlling VID0 a | AOSMD 万国半导体 | |||
SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR SOT-23 Formed SMD Package N–P N transistor | CDIL | |||
NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1J | Central | |||
TO-92 Plastic Package Transistors (NPN) 文件:226.57 Kbytes Page:2 Pages | CDIL |
MMBT2369产品属性
- 类型
描述
- 型号
MMBT2369
- 功能描述
两极晶体管 - BJT NPN HIGH SPD SW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
23+ |
SOT23 |
7100 |
绝对全新原装!现货!特价!请放心订购! |
|||
ON |
24+ |
SOT-23 |
2987 |
绝对全新原装现货供应! |
|||
ON/安森美 |
2023+ |
SOT-23 |
2229 |
十五年行业诚信经营,专注全新正品 |
|||
ONSEMI |
2021 |
NA |
21000 |
全新原装!优势库存热卖中! |
|||
ON/安森美 |
21+ |
SOT23 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON |
24+ |
SOT23 |
18700 |
||||
N/A |
23+ |
NA |
47815 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
23+ |
SOT23 |
18000 |
全新原装现货,假一赔十 |
|||
FSC/ON |
23+ |
原包装原封□□ |
86666 |
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存 |
|||
24+ |
SOT-23 |
5000 |
公司存货 |
MMBT2369芯片相关品牌
MMBT2369规格书下载地址
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MMBT2369数据表相关新闻
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DdatasheetPDF页码索引
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