MMBT2369晶体管资料
MMBT2369别名：MMBT2369三极管、MMBT2369晶体管、MMBT2369晶体三极管
MMBT2369生产厂家：美国摩托罗拉半导体公司
MMBT2369制作材料：
MMBT2369性质：中速 （MS）_开关管 （SW）
MMBT2369封装形式：
MMBT2369极限工作电压：40V
MMBT2369最大电流允许值：0.5A
MMBT2369最大工作频率：<1MHZ或未知
MMBT2369引脚数：
MMBT2369最大耗散功率：0.3W
MMBT2369放大倍数：
MMBT2369图片代号：NO
MMBT2369vtest：40
MMBT2369htest：999900
- MMBT2369atest：0.5
MMBT2369wtest：0.3
MMBT2369代换 MMBT2369用什么型号代替：3DG120B,
MMBT2369价格
参考价格：￥0.1265
型号：MMBT2369 品牌：Fairchild 备注：这里有MMBT2369多少钱，2026年最近7天走势，今日出价，今日竞价，MMBT2369批发/采购报价，MMBT2369行情走势销售排行榜，MMBT2369报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT2369 | NPN Switching Transistor NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. | FAIRCHILD 仙童半导体 |   | |
MMBT2369 | 丝印代码：M1J；NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | BILIN 银河微电 | | |
MMBT2369 | Surface Mount Si-Epi-Planar Switching Transistors Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging ta | DIOTEC 德欧泰克 | | |
MMBT2369 | NPN Silicon Switching Transistor NPN Silicon Switching Transistor | SEMTECH_ELEC 先之科半导体 | | |
MMBT2369 | Plastic-Encapsulate Transistors FEATURES Epitaxial planar die construction. Ultra-small surface mount package. | HOTTECH 合科泰 | | |
MMBT2369 | Epitaxial planar die construction. FEATURES Epitaxial planar die construction. Ideal for medium power amplification and switching. | MAKOSEMI 美科半导体 | | |
MMBT2369 | 丝印代码：M1J；NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | LUGUANG 鲁光电子 | | |
MMBT2369 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：TRANS NPN 15V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MMBT2369 | 丝印代码：M1J；NPN General Purpose Amplifier 文件：145.87 Kbytes Page：3 Pages | BILIN 银河微电 | | |
MMBT2369 | 15V,0.2A,General Purpose NPN Bipolar Transistor | GALAXY 银河微电 | | |
MMBT2369 | NPN小信号三极管 | CHINABASE 创基电子 | | |
MMBT2369 | Bipolar Transistors | DIOTEC 德欧泰克 | | |
丝印代码：1JA；NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | LUGUANG 鲁光电子 | | ||
NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 15V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method | PANJIT 強茂 | | ||
Surface Mount Si-Epi-Planar Switching Transistors Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging ta | DIOTEC 德欧泰克 | | ||
丝印代码：1JA；NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. | BILIN 银河微电 | | ||
NPN Silicon Switching Transistor NPN Silicon Switching Transistor | SEMTECH_ELEC 先之科半导体 | | ||
丝印代码：1S；NPN Switching Transistor NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. | FAIRCHILD 仙童半导体 | | ||
丝印代码：1S；NPN Switching Transistor NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. | FAIRCHILD 仙童半导体 | | ||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
Switching Transistors(NPN Silicon) Switching Transistor NPN Silicon | LRC 乐山无线电 | | ||
Switcing Transistors Switching Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
Switching Transistors Switching Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
GENERAL PURPOSE TRANSISTORS Features -Power dissipation PC=0.3W | COMCHIP 典琦 | | ||
Switcing Transistors Switching Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
Switcing Transistors Switching Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
Switching Transistors Switching Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Switching Transistors(NPN Silicon) Switching Transistor NPN Silicon | LRC 乐山无线电 | | ||
Switching Transistors Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
Switching Transistors 文件：386.11 Kbytes Page：6 Pages | WILLAS 威伦电子 | | ||
NPN Switching Transistor 文件：127.04 Kbytes Page：5 Pages | FAIRCHILD 仙童半导体 | | ||
NPN General Purpose Amplifier 文件：145.87 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
NPN General Purpose Amplifier 文件：146.66 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
NPN General Purpose Amplifier 文件：146.66 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Switching Transistors NPN Silicon 文件：88.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
包装：散装 描述：TRANS SS GP NPN 15V SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Switching Transistors 文件：195.81 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors NPN Silicon 文件：88.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors NPN Silicon 文件：88.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors NPN Silicon 文件：88.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors NPN Silicon 文件：88.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors 文件：195.81 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors 文件：195.81 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switching Transistors Switching Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Switching Transistors Switching Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
SWITCHING REGULATOR CONTROL IC FOR FLYBACK? 文件：329.81 Kbytes Page：9 Pages | NJRC 日本无线 | | ||
SWITCHING REGULATOR CONTROL IC FOR FLYBACK? 文件：329.81 Kbytes Page：9 Pages | NJRC 日本无线 | | ||
SWITCHING REGULATOR CONTROL IC FOR FLYBACK? 文件：329.81 Kbytes Page：9 Pages | NJRC 日本无线 | |
MMBT2369产品属性
- 类型
描述
- Compliance：
Pb-freeHalide free
- Status：
Active
- Description：
Switching Transistor
- Polarity：
- Type：
- VCE(sat) Max (V)：
- IC Cont. (A)：
- VCEO Min (V)：
- hFE Min：
- hFE Max：
- fT Min (MHz)：
- PTM Max (W)：
- Package Type：
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
25+ |
SOT-23 |
32000 |
FAIRCHILD/仙童全新特价MMBT2369即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
23+ |
SOT-23(SOT-23-3) |
12014 |
公司只做原装正品,假一赔十 |
|||
ON(安森美) |
25+ |
SOT-23(SOT-23-3) |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ONSEMI |
25+ |
NA |
21000 |
全新原装!优势库存热卖中! |
|||
ON(安森美) |
2511 |
SOT-23-3 |
4945 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON/安森美 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
FAIRCHILD |
21+ |
SOT23-3 |
18146 |
十年信誉,只做原装,有挂就有现货! |
|||
ON/安森美 |
18+ |
NA |
24000 |
||||
ON/安森美 |
18+ |
NA |
24000 |
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DdatasheetPDF页码索引
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