Schottky Barrier Diodes

Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount appl

Schottky Barrier Diodes

Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount appl

Schottky Barrier Diodes

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. • Extremel

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：DIODE SCHOTTKY 70V 120MW SC70-3 分立半导体产品 二极管 - 射频

Schottky Barrier Diodes

Schottky Barrier Diodes

Schottky barrier diodes are designed primarily for high--efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT--323/SC--70 package which is designed for low--power surface mount applications. Featur

MMBD330T1G

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封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 70V 120MW SC70-3 分立半导体产品 二极管 - 射频

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance – 1.0 pF @ 20 V • Low Reverse Leakage – 200 nA (max)