Plastic-Encapsulated Diode

SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulate Diode

FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance Power dissipation

Fast Switching Speed

FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications

80V N-Channel MOSFET

General Description The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpos

80V N-Channel MOSFET

General Description The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpos

Air solenoid valve

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Surface Mount High Current Power Toroids

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SMD Switching Diode

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