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MMBD355LT1G价格
参考价格：￥0.3202
型号：MMBD355LT1G 品牌：ON 备注：这里有MMBD355LT1G多少钱，2025年最近7天走势，今日出价，今日竞价，MMBD355LT1G批发/采购报价，MMBD355LT1G行情走势销售排行榜，MMBD355LT1G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD355LT1G | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 |   | |
MMBD355LT1G | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | |
MMBD355LT1G | Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | |
MMBD355LT1G | Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | |
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | Motorola 摩托罗拉 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | |
MMBD355LT1G产品属性
- 类型
描述
- 型号
MMBD355LT1G
- 功能描述
整流器 7V 225mW Dual Common Anode
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
|||
onsemi(安森美) |
24+ |
SOT233 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
24+ |
SMD |
105000 |
全新正品现货供应特价库存 |
|||
ON |
24+ |
SOT-23 (TO-236) |
25000 |
ON全系列可订货 |
|||
ON |
SOT23 |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON/安森美 |
25+ |
SOT-23 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON SEMICONDUCTOR |
2043 |
con |
2901 |
现货常备产品原装可到京北通宇商城查价格 |
|||
ON/安森美 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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MMBD355LT1G规格书下载地址
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商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） - 漏源电压（Vdss） - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散（Ta=25°C） 225mW
2020-11-12
DdatasheetPDF页码索引
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