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MMBD301LT1价格
参考价格:¥0.1015
型号:MMBD301LT1G 品牌:ON 备注:这里有MMBD301LT1多少钱,2025年最近7天走势,今日出价,今日竞价,MMBD301LT1批发/采购报价,MMBD301LT1行情走势销售排行榜,MMBD301LT1报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MMBD301LT1 | Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requiremen | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | ||
MMBD301LT1 | SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MMBD301LT1 | Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes 文件:65.84 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Hot-Carrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Hot-Carrier Diodes 文件:95.08 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes 文件:65.84 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 30V 200MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirem | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
Silicon Hot-Carrier Diodes Schottky Barrier Diodes 文件:87.44 Kbytes Page:3 Pages | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | |||
Silicon Hot?밅arrier Diodes Schottky Barrier Diodes 文件:112.78 Kbytes Page:3 Pages | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | |||
Silicon Hot?밅arrier Diodes 文件:119.35 Kbytes Page:3 Pages | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | |||
Silicon Hot-Carrier Diodes Schottky Barrier Diodes 文件:110.8 Kbytes Page:3 Pages | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |
MMBD301LT1产品属性
- 类型
描述
- 型号
MMBD301LT1
- 功能描述
肖特基二极管与整流器 30V 200mW Single
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES |
24+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ON |
24+ |
TO-23 |
2987 |
绝对全新原装现货供应! |
|||
ON/安森美 |
21+ |
NA |
333000 |
只做原装,假一罚十 |
|||
ON |
23+ |
SOT23 |
218 |
正规渠道,只有原装! |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
1921+ |
SOT23-3 |
13000 |
进口原装公司现货热卖 |
|||
ON(安森美) |
24+ |
SOT-23(SOT-23-3) |
19048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
25+ |
SOT-23 |
17702 |
ON/安森美原装特价MMBD301LT1G即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
1186 |
专做原装正品,假一罚百! |
||||
N/A |
25+ |
NEW |
3000 |
全新原装、诚信经营、公司现货销售! |
MMBD301LT1规格书下载地址
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商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) - 漏源电压(Vdss) - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散(Ta=25°C) 225mW
2020-11-12
DdatasheetPDF页码索引
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