High Voltage General Purpose Diode

Descriptions Sourced from process 2V.

小信号二极管

采用工艺2V设计。

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE GP 175V 200MA SOT23-3 分立半导体产品 二极管 - 整流器 - 单

250 V Switching Diode

The high voltage switching diode is designed for high voltage, high speed switching applications.This dual diode device contains two electrically isolated high voltage switching diodes encapsulated in a SOT-23 surface mount package. • S Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• NA\n• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant\n• NA;

Dual Series High Voltage Switching Diode

Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 单

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

Silicon NPN Phototransistors

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Power plug for the universal mains

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