62 V，1.0 A 功率 MOSFET，逻辑电平

此类器件具有用于短路保护的电流限制、用于 ESD 保护的集成式门极-源极箝位，以及用于过电压保护的门极-漏极箝位。接口 MCU 的输出时，无需附加门极串联电阻，但建议使用一个 40 kΩ 门极下拉电阻以避免浮动门极情况。内部门极-源极和门极-漏极箝位使得此类器件应用时无需外部瞬变抑制组件。门极-源极箝位会针对高达 2.0 kV 的静电门极电压对 MOSFET 输入提供保护。门极-漏极箝位会针对带有直感负载发生的漏极雪崩压力保护 MOSFET 漏极。此独特设计提供了基本与运行温度无关的电压箝位。 • Temperature Compensated Gate-to-Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage\n• Integrated ESD Diode Protection\n• Controlled Switching Minimizes RFI\n• Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors;

封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器

SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220

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VOLTAGE CLAMPED CURRENT LIMITING MOSFET

文件：136.69 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

文件：136.69 Kbytes Page：6 Pages

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

SMARTDISCRETES Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include auto

1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET

The RLP1N06CLE is an intelligent monolithic power circuit which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current limiting of this device allows it to be used safely in circuits where it is anticipated that a shorted load condition may be en