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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MLN | Multiline Transient Voltage Surge Suppressor 文件：170.09 Kbytes Page：7 Pages | Littelfuselittelfuse 力特力特公司 |  |   |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1027FisDesignedforClassA,LinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=12dBat0.5W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor |  | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1027SisDesignedforClassA,LinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=9.0dBat0.5W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1027SLisDesignedforClassA,LinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=9.0dBat0.5W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1027SSisDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1030FisDesignedforClassA,LinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=12dBat1.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1030SisDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1030SLisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=9.0dBat1.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1030SSisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=10dBat1.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1033FisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=12dBat2.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1033SisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=9.0dBat2.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1037FisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=10dBat5.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN1037SisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: •ClassAOperation •PG=8.0dBat5.0W/1.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN2027FisDesignedforClassALinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=8.0dBat0.5W/2.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN2027SSisDesignedforClassALinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=6.0dBat0.5W/2.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN2030FisDesignedforClassALinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=7.0dBat0.5W/2.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN2030SSisDesignedforClassAlinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=10dBat1.0W/2.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN2033FisDesignedforClassALinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=12dBat2.0W/2.0GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMLN2037FisDesignedforClassALinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=5.0dBat5.0W/2.0GHz •Omnigold™MetalizationSystem •CommonEmitter | ASI Advanced Semiconductor | | | |
M - Rugged Ratchet coupling 文件：73.46 Kbytes Page：2 Pages | LEMOLEMO Connectors 雷莫电子雷莫电子(上海）有限公司 | LEMO | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.9 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.9 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：17.72 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：17.72 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：17.49 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：17.49 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.25 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.25 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.92 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.92 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：17.35 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：17.35 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.32 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.32 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.8 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.8 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.22 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.22 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：19.06 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：19.06 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.24 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.24 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：21.56 Kbytes Page：2 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：21.56 Kbytes Page：2 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.79 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.79 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.21 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.21 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.96 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR 文件：18.96 Kbytes Page：1 Pages | ASI Advanced Semiconductor | | |
MLN产品属性
- 类型
描述
- 型号
MLN
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Multiline Transient Voltage Surge Suppressor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
2402+ |
SMD |
8324 |
原装正品!实单价优! |
|||
台产 |
2019+ |
SMD |
1571 |
原厂渠道 可含税出货 |
|||
24+ |
5000 |
公司存货 |
|||||
MCSLOGI |
24+ |
QFP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
LMETROLGIC |
2447 |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
美磊 |
2016+ |
SMD |
4897 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MAG LAYERS/美磊 |
2018+ |
SMD |
3000 |
原装现货 |
|||
Ferroxcube |
22+ |
SMD |
68400 |
原装现货样品可售 |
|||
MAG |
2022+ |
2520 |
3000 |
原厂代理 终端免费提供样品 |
|||
MCSLOGI |
23+ |
QFP |
3570 |
全新原装正品现货,支持订货 |
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MLN数据表相关新闻
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2019-3-5MLF1005LR10KT-SMD电感
SMD电感（线圈）对于信号线（多层，磁屏蔽）要进一步精简各种数字设备保持高度的功能，并在低功耗到Excel，安装在设备上的零件也需要有较低的阻力。MLF1005L类型是一个电感器已的新生产线开发，以满足这样的要求：，他们的抵抗已经高达35％的下降，与现有的比较MLF1005类型。此外，该新型电感器使用类似的磁屏蔽，这使他们的高密度安装。MLF1005LR10KT特点•MLF1005L类型的电阻降低高达35％，与现有MLF1005类型的比较。•磁屏蔽配置，允许
2012-11-6
DdatasheetPDF页码索引
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