MITSUCISHI LASER DIODES

DESCRIPTION Mitsubishi ML4XX6 are AlGaAs laser diodes emitting light beams around 780nm wavelength. They lase by applying forward current exceeding threshold values, and emit light power of about 3mW/facet at an operating current of around 10mA in excess of the threshold current. They operate, un

N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source ind

30V N-Channel MOSFET

General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Product Summary VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Produ

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

30V N-Channel MOSFET

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