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MJL价格
参考价格：￥10.2975
型号：MJL1302AG 品牌：ONSemi 备注：这里有MJL多少钱，2024年最近7天走势，今日出价，今日竞价，MJL批发/采购报价，MJL行情走势销售排行榜，MJL报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS MJL1302A-->PNP MJL3281A-->NPN •TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •Gai | MotorolaMotorola, Inc 摩托罗拉 |  |   | |
COMPLEMENTARY SILICON POWER TRANSISTORS 15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS260VOLTS200WATTS MJL3281A(NPN) MJL1302A(PNP) TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinear Features •ExceptionalSafeOperatingArea •NPN/PNPGai | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS MJL1302A-->PNP MJL3281A-->NPN •TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •Gai | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS 15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS260VOLTS200WATTS MJL3281A(NPN) MJL1302A(PNP) TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinear Features •ExceptionalSafeOperatingArea •NPN/PNPGai | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
200Watt/-15A/-260V Silicon Planar PNP Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL3281A APPLICATIONS ·HomeAmplifiers/HomeReceivers ·TheaterandStadiumSoundSystems ·PublicAddressSystems(PAs) | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 |  | | |
POWER TRANSISTOR 15 AMPERES 1500 VOLTS - VCES 170 WATTS SCANSWITCH™NPNBipolarPowerDeflectionTransistorForHighandVeryHighResolutionMonitors TheMJL16218isastate–of–the–artSWITCHMODEbipolarpowertransistor.Itisspecificallydesignedforuseinhorizontaldeflectioncircuitsfor20mmdiameterneck,highandveryhighresolution,ful | MotorolaMotorola, Inc 摩托罗拉 | | | |
POWER TRANSISTOR SCANSWITCH™NPNBipolarPowerDeflectionTransistorForHighandVeryHighResolutionMonitors TheMJL16218isastate–of–the–artSWITCHMODEbipolarpowertransistor.Itisspecificallydesignedforuseinhorizontaldeflectioncircuitsfor20mmdiameterneck,highandveryhighresolution,ful | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS SiliconPowerTransistors TheMJL21193andMJL21194utilizePerforatedEmittertechnologyandarespecificallydesignedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. •TotalHarmonicDistortionCharacterized •HighDCCurrentGain–hFE=25Min@IC=8Adc •Exc | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS SiliconPowerTransistors TheMJL21193andMJL21194utilizePerforatedEmittertechnologyandarespecificallydesignedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. Features •TotalHarmonicDistortionCharacterized •HighDCCurrentGain−hFE=25Min@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PLpackage •ComplementtotypeMJL21194 •Excellentgainlinearity APPLICATIONS •Designedforhighpoweraudiooutput,diskheadpositionersandlinearapplications | SAVANTIC Savantic, Inc. |  | | |
isc Silicon PNP Power Transistor DESCRIPTION •TotalHarmonicDistortionCharacterized •HighDCCurrentGain •HighAreaofSafeOperation APPLICATIONS •Designedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
200 Watt Silicon Epitaxial Planar PNP Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21194A APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
200 Watt Silicon Epitaxial Planar PNP Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21194G APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS SiliconPowerTransistors TheMJL21193andMJL21194utilizePerforatedEmittertechnologyandarespecificallydesignedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. •TotalHarmonicDistortionCharacterized •HighDCCurrentGain–hFE=25Min@IC=8Adc •Exc | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS SiliconPowerTransistors TheMJL21193andMJL21194utilizePerforatedEmittertechnologyandarespecificallydesignedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. Features •TotalHarmonicDistortionCharacterized •HighDCCurrentGain−hFE=25Min@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
200 Watt Silicon Epitaxial Planar NPN Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21193A APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
200 Watt Silicon Epitaxial Planar NPN Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21193G APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS 16ACOMPLEMENTARYSILICONPOWERTRANSISTORS250V,200W TheMJL21195andMJL21196utilizePerforatedEmittertechnologyandarespecificallydesignedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. •TotalHarmonicDistortionCharacterized •HighDCCur | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
200 Watt Silicon Epitaxial Planar PNP Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21196A APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
200 Watt Silicon Epitaxial Planar PNP Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21196G APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS 16ACOMPLEMENTARYSILICONPOWERTRANSISTORS250V,200W TheMJL21195andMJL21196utilizePerforatedEmittertechnologyandarespecificallydesignedforhighpoweraudiooutput,diskheadpositionersandlinearapplications. •TotalHarmonicDistortionCharacterized •HighDCCur | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
200 Watt Silicon Epitaxial Planar NPN Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21195A APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
200 Watt Silicon Epitaxial Planar NPN Type Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL21195G APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS MJL1302A-->PNP MJL3281A-->NPN •TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •Gai | MotorolaMotorola, Inc 摩托罗拉 | | | |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS200WATTS MJL1302A-->PNP MJL3281A-->NPN •TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •Gai | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS 15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS260VOLTS200WATTS MJL3281A(NPN) MJL1302A(PNP) TheMJL3281AandMJL1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinear Features •ExceptionalSafeOperatingArea •NPN/PNPGai | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
200Watt/15A/260V Silicon Epitaxial Planar NPN Power Transistor DESCRIPTION ·WithTO-3PL-SQ(TO-3PBL/TO-3BPL)pkg ·ComplementtotypeMJL1302A APPLICATIONS ·HomeAmplifiers/HomeReceivers ·TheaterandStadiumSoundSystems ·PublicAddressSystems(PAs) | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
isc Silicon NPN Power Transistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage :V(BR)CEO=350V(Min) ·HighDCCurrentGain :hFE=25Min@IC=8Adc ·ComplementtoTypeMJL4302A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·PerforatedEmittertechnology ·Hig | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary NPN-PNP Silicon Power Bipolar Transistors MJL4281A(NPN) MJL4302A(PNP) 15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS350VOLTS,230WATTS TheMJL4281AandMJL4302AarePowerBasepowertransistorsforhighpoweraudio. Features •350VCollector−EmitterSustainingVoltage •GainComplementary: GainLinear | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary NPN-PNP Silicon Power Bipolar Transistors MJL4281A(NPN) MJL4302A(PNP) 15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS350VOLTS,230WATTS TheMJL4281AandMJL4302AarePowerBasepowertransistorsforhighpoweraudio. Features •350VCollector−EmitterSustainingVoltage •GainComplementary: GainLinear | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon PNP Power Transistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage :V(BR)CEO=-350V(Min) ·HighDCCurrentGain :hFE=25Min@IC=-8Adc ·ComplementtoTypeMJL4281A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·PerforatedEmittertechnology ·H | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary NPN-PNP Power Bipolar Transistors 文件：58.92 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary NPN-PNP Power Bipolar Transistors 文件：58.92 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-264-3，TO-264AA 包装：托盘 描述：TRANS NPN 260V 15A TO264 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-264-3，TO-264AA 包装：托盘 描述：TRANS PNP 260V 15A TO264 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary NPN-PNP Power Bipolar Transistors 文件：58.92 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary NPN-PNP Power Bipolar Transistors 文件：58.92 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS 文件：67.98 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon PNP Power Transistor 文件：223.58 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Bipolar Power Transistors 文件：114.47 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS 文件：67.98 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Bipolar Power Transistors 文件：114.47 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Power Transistors 文件：132.79 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon NPN Power Transistors 文件：180.4 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | | |
Silicon Power Transistors 文件：122.36 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS 文件：152.31 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS 文件：152.31 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Power Transistors 文件：132.79 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Power Transistors 文件：122.36 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS 文件：152.31 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Power Transistors 文件：132.79 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Power Transistors 文件：122.36 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon NPN Power Transistors 文件：179.04 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | | |
Silicon Power Transistors 文件：132.79 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon NPN Power Transistor 文件：240.29 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon Power Transistors 文件：122.36 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon NPN Power Transistors 文件：180.63 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS 文件：152.31 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS 文件：152.31 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Power Transistors 文件：132.79 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJL产品属性
- 类型
描述
- 型号
MJL
- 制造商
ITW McMurdo Connectors
- 功能描述
JACKSCREW D 60MM PK2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
22+ |
NA |
8000 |
原厂原装现货 |
|||
ON/安森美 |
2120 |
TO-3PL |
2500 |
原装正品/假一赔十/只做现货 |
|||
ON/安森美 |
22+ |
TO-3PBL |
376629 |
特价原装现货,能提供更多数量 一片起订 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ST/意法 |
22+ |
TO-264 |
99348 |
||||
ON |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
onsemi(安森美) |
23+ |
TO-264-3 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
22+ |
TO-3PBL |
34137 |
只做原装进口现货 |
|||
ON/安森美 |
23+ |
TO-247 |
89630 |
当天发货全新原装现货 |
|||
ON/安森美 |
22+ |
TO-3P |
46157 |
郑重承诺只做原装进口货 |
MJL芯片相关品牌
MJL规格书下载地址
MJL参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
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- n74
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- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MJS100
- MJS1.5
- MJS1.25
- MJP122
- MJN3C-N
- MJN3C-I
- MJN3CF
- MJN3C
- MJN2C-N
- MJN2CK
- MJN2C-I
- MJN2CF
- MJN2CE
- MJN2C-DC24
- MJN2C-DC12
- MJN2C-DC110
- MJN2C-AC240
- MJN2C-AC24
- MJN2C
- MJN1Z-E-RP-DC24
- MJN1C-N-DC24
- MJN1C-N-DC12
- MJN1C-N-AC24
- MJN1CNAC24
- MJN1CNAC120
- MJN1C-N
- MJN1C-I
- MJN1CF
- MJN1C-AC24
- MJN1C
- MJL4302AG
- MJL4281AG
- MJL3281AG
- MJL3281
- MJL21196G
- MJL21195G
- MJL21194G
- MJL21193G
- MJL1302AG
- MJL1302
- MJIB010
- MJI6012
- MJHK2
- MJHK_12
- MJH6287G
- MJH6287
- MJH6286
- MJH6285
- MJH6284G
- MJH6284
- MJH6283
- MJH6282
- MJH11022G
- MJH11021G
- MJH11020G
- MJH11019G
- MJH11017G
- MJF6668
- MJF6388G
- MJF6388
- MJF6107
- MJF47G
- MJF47
- MJF45H11G
- MJF44H11G
- MJF4343
- MJF32CG
- MJF32C
- MJF31CG
- MJF31C
- MJF3055G
- MJF2955G
- MJF18008G
- MJF18004G
- MJF15031G
- MJF15030G
- MJF127G
MJL数据表相关新闻
MJL21195G
MJL21195G
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类别 集成电路（IC） 嵌入式-微控制器 制造商 NXPUSAInc. 系列 KinetisK10 包装 托盘 零件状态 有源 核心处理器 ARM?Cortex?-M4 内核规格 32-位 速度 50MHz 连接能力 I2C，IrDA，SPI，UART/USART 外设 DMA，I2S，LVD，POR，PWM，WDT 程序存储容量 32KB（32Kx8） 程
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2019-11-30MJE182G双极晶体管-双极结型晶体管(BJT)原装现货
MJE182G双极晶体管-双极结型晶体管(BJT)原装现货
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深圳市宏世佳电子现货销售
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DdatasheetPDF页码索引
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- P80
